All Transistors. RN1316 Datasheet

 

RN1316 Datasheet and Replacement


   Type Designator: RN1316
   SMD Transistor Code: XT
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT323 SC70 USM
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RN1316 Datasheet (PDF)

 ..1. Size:455K  toshiba
 rn1314 rn1315 rn1316 rn1317 rn1318.pdf pdf_icon

RN1316

RN1314RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Res

 9.1. Size:159K  toshiba
 rn1314-rn1318.pdf pdf_icon

RN1316

RN1314RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Res

 9.2. Size:261K  toshiba
 rn1310 rn1311.pdf pdf_icon

RN1316

RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2310 and RN2311 Equivalent Circui

 9.3. Size:287K  toshiba
 rn1312 rn1313.pdf pdf_icon

RN1316

RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2312, RN2313 Equivalent Circuit Absolute Maximum Ratings (Ta = 25

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1262 | 2SA1407E | 2N2872 | 2SC3712 | 2SA242 | T11 | NB221YX

Keywords - RN1316 transistor datasheet

 RN1316 cross reference
 RN1316 equivalent finder
 RN1316 lookup
 RN1316 substitution
 RN1316 replacement

 

 
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