RN1412 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1412
SMD Transistor Code: XN
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT346 SC59 SMINI
RN1412 Transistor Equivalent Substitute - Cross-Reference Search
RN1412 Datasheet (PDF)
rn1412 rn1413.pdf
RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2412, RN2413 Equivalent Circuit Maximum Ratings (Ta = 25C)
rn1410 rn1411.pdf
RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2410, RN2411 Equivalent Circuit Maximum Ratings (Ta = 25C) JED
rn1414-rn1418.pdf
RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2414~RN2418 Equivalent Circuit and Bias Res
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