RN1423 Datasheet. Specs and Replacement
Type Designator: RN1423
SMD Transistor Code: QC
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
RN1423 Substitution
- BJT ⓘ Cross-Reference Search
RN1423 datasheet
RN1421 RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications High current type (IC (max) = 800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and... See More ⇒
Detailed specifications: RN1413, RN1414, RN1415, RN1416, RN1417, RN1418, RN1421, RN1422, TIP142, RN1424, RN1425, RN1426, RN1427, RN1441, RN1442, RN1443, RN1444
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