RN2113FS PDF and Equivalents Search

 

RN2113FS Specs and Replacement


   Type Designator: RN2113FS
   SMD Transistor Code: UJ_XP_YP
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: FSM
 

 RN2113FS Substitution

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RN2113FS datasheet

 ..1. Size:94K  toshiba
rn2112fs rn2113fs.pdf pdf_icon

RN2113FS

RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe... See More ⇒

 7.1. Size:276K  toshiba
rn2112f rn2113f.pdf pdf_icon

RN2113FS

RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (... See More ⇒

 7.2. Size:124K  toshiba
rn2112ft-rn2113ft.pdf pdf_icon

RN2113FS

RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.... See More ⇒

 8.1. Size:290K  toshiba
rn2112mfv rn2113mfv.pdf pdf_icon

RN2113FS

RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.2 0.05 Ultra-small package, suited to very high density mounting 0.8 0.05 Incorporating a bias resistor into the transistor reduces the number of ... See More ⇒

Detailed specifications: RN2111 , RN2112ACT , RN2112CT , RN2112FS , RN2112MFV , RN2112 , RN2113ACT , RN2113CT , 2SC5200 , RN2113F , RN2113MFV , RN2113 , RN2114MFV , RN2114 , RN2115F , RN2115MFV , RN2115 .

History: PL1051

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