RN2117MFV PDF and Equivalents Search

 

RN2117MFV Specs and Replacement


   Type Designator: RN2117MFV
   SMD Transistor Code: YU.
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT723 VESM
 

 RN2117MFV Substitution

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RN2117MFV datasheet

 ..1. Size:200K  toshiba
rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf pdf_icon

RN2117MFV

RN2114MFV RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit mm Switching Applications Inverter Circuit Applications 1.2 0.05 0.8 0.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis... See More ⇒

 9.1. Size:175K  toshiba
rn2114ft rn2118ft.pdf pdf_icon

RN2117MFV

RN2114FT RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT... See More ⇒

 9.2. Size:102K  toshiba
rn2110-rn2111.pdf pdf_icon

RN2117MFV

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha... See More ⇒

 9.3. Size:179K  toshiba
rn2114f rn2118f.pdf pdf_icon

RN2117MFV

RN2114F RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F RN1118F Equivalent Circuit and B... See More ⇒

Detailed specifications: RN2115MFV , RN2115 , RN2116FT , RN2116F , RN2116MFV , RN2116 , RN2117FT , RN2117F , 2SA1943 , RN2117 , RN2118FT , RN2118F , RN2118MFV , RN2118 , RN2119MFV , RN2130MFV , RN2131MFV .

History: 2N2218A | RN2116MFV

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