RN2119MFV PDF and Equivalents Search

 

RN2119MFV Specs and Replacement


   Type Designator: RN2119MFV
   SMD Transistor Code: YZ.
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT723 VESM
 

 RN2119MFV Substitution

   - BJT ⓘ Cross-Reference Search

   

RN2119MFV datasheet

 ..1. Size:154K  toshiba
rn2119mfv.pdf pdf_icon

RN2119MFV

RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors 1.2 0.05 Simplify circuit design 0.8 0.05 Reduce a quantity of parts and manufacturing process Complementary to RN1119MFV 1 Equivalent Circuit 2 3 1.BASE VESM... See More ⇒

 9.1. Size:175K  toshiba
rn2114ft rn2118ft.pdf pdf_icon

RN2119MFV

RN2114FT RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT... See More ⇒

 9.2. Size:102K  toshiba
rn2110-rn2111.pdf pdf_icon

RN2119MFV

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha... See More ⇒

 9.3. Size:179K  toshiba
rn2114f rn2118f.pdf pdf_icon

RN2119MFV

RN2114F RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F RN1118F Equivalent Circuit and B... See More ⇒

Detailed specifications: RN2117FT , RN2117F , RN2117MFV , RN2117 , RN2118FT , RN2118F , RN2118MFV , RN2118 , D882 , RN2130MFV , RN2131MFV , RN2132MFV , RN2301 , RN2302 , RN2303 , RN2304 , RN2305 .

History: PMBTA13

Keywords - RN2119MFV pdf specs

 RN2119MFV cross reference
 RN2119MFV equivalent finder
 RN2119MFV pdf lookup
 RN2119MFV substitution
 RN2119MFV replacement

 

 
Back to Top

 


 
.