2N1175 Specs and Replacement

Type Designator: 2N1175

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO5

 2N1175 Substitution

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Detailed specifications: 2N1168, 2N1169, 2N117, 2N1170, 2N1171, 2N1172, 2N1173, 2N1174, C5198, 2N1175A, 2N1175B, 2N1176, 2N1176A, 2N1176B, 2N1177, 2N1178, 2N1179

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