2N1175A Specs and Replacement
Type Designator: 2N1175A
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO5
2N1175A Substitution
- BJT ⓘ Cross-Reference Search
2N1175A datasheet
Detailed specifications: 2N1169, 2N117, 2N1170, 2N1171, 2N1172, 2N1173, 2N1174, 2N1175, BC337, 2N1175B, 2N1176, 2N1176A, 2N1176B, 2N1177, 2N1178, 2N1179, 2N118
Keywords - 2N1175A pdf specs
2N1175A cross reference
2N1175A equivalent finder
2N1175A pdf lookup
2N1175A substitution
2N1175A replacement




