RN49A1FE Datasheet, Equivalent, Cross Reference Search
Type Designator: RN49A1FE
SMD Transistor Code: 15
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT563
ES6
RN49A1FE Transistor Equivalent Substitute - Cross-Reference Search
RN49A1FE Datasheet (PDF)
rn49a1fe.pdf
RN49A1FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A1FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the
rn49a1.pdf
RN49A1 TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49A1 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en
rn49a5.pdf
RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count en
rn49a6fs.pdf
RN49A6FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Unit: mmInverter Circuit Applications Interface Circuit Applications 1.00.050.80.05 0.10.050.10.05Driver Circuit Applications 1 6 Two devices are incorporated into a fine pitch small mold (6-pin) 52package.
rn49a4fe.pdf
RN49A4FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A4FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the
rn49a2.pdf
RN49A2 TOSHIBA Transistor Silicon NPN-PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A2 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
