All Transistors. RN49A1 Datasheet

 

RN49A1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN49A1
   SMD Transistor Code: 15
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT363 SC88 US6

 RN49A1 Transistor Equivalent Substitute - Cross-Reference Search

   

RN49A1 Datasheet (PDF)

 ..1. Size:104K  toshiba
rn49a1.pdf

RN49A1
RN49A1

RN49A1 TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49A1 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 0.1. Size:291K  toshiba
rn49a1fe.pdf

RN49A1
RN49A1

RN49A1FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A1FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the

 9.1. Size:181K  toshiba
rn49a5.pdf

RN49A1
RN49A1

RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count en

 9.2. Size:157K  toshiba
rn49a6fs.pdf

RN49A1
RN49A1

RN49A6FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Unit: mmInverter Circuit Applications Interface Circuit Applications 1.00.050.80.05 0.10.050.10.05Driver Circuit Applications 1 6 Two devices are incorporated into a fine pitch small mold (6-pin) 52package.

 9.3. Size:233K  toshiba
rn49a4fe.pdf

RN49A1
RN49A1

RN49A4FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A4FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the

 9.4. Size:103K  toshiba
rn49a2.pdf

RN49A1
RN49A1

RN49A2 TOSHIBA Transistor Silicon NPN-PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A2 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RN4907

 

 
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