RN49A6FS Datasheet, Equivalent, Cross Reference Search
Type Designator: RN49A6FS
SMD Transistor Code: X8
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 1.2
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT963
FS6
RN49A6FS Transistor Equivalent Substitute - Cross-Reference Search
RN49A6FS Datasheet (PDF)
rn49a6fs.pdf
RN49A6FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Unit: mmInverter Circuit Applications Interface Circuit Applications 1.00.050.80.05 0.10.050.10.05Driver Circuit Applications 1 6 Two devices are incorporated into a fine pitch small mold (6-pin) 52package.
rn49a5.pdf
RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count en
rn49a1fe.pdf
RN49A1FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A1FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the
rn49a1.pdf
RN49A1 TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49A1 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en
rn49a4fe.pdf
RN49A4FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A4FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the
rn49a2.pdf
RN49A2 TOSHIBA Transistor Silicon NPN-PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A2 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
