RN49J2FS Datasheet, Equivalent, Cross Reference Search
Type Designator: RN49J2FS
SMD Transistor Code: X1
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 1.2
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT963
FS6
RN49J2FS Transistor Equivalent Substitute - Cross-Reference Search
RN49J2FS Datasheet (PDF)
rn49j2fs.pdf
RN49J2FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49J2FS Switching Applications Unit: mmInverter Circuit Applications 1.00.05Interface Circuit Applications 0.80.05 0.10.050.10.05Driver Circuit Applications 1 652 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 4
rn49j2afs.pdf
RN49J2AFS PNP NPN (PCT) () RN49J2AFS : mm 1.00.050.80.05 0.10.050.10.05 1 6 (6)
rn49j7fs.pdf
RN49J7FS TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49J7FS Unit: mmSwitching Applications 1.00.05Inverter Circuit Applications 0.80.05 0.10.050.10.05Interface Circuit Applications 1 6Driver Circuit Applications 5 2 Two devices are incorporated into a fine pitch small mold (6-pin) 43packag
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
