2SA1942 Specs and Replacement
Type Designator: 2SA1942
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 320 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3PL
- BJT ⓘ Cross-Reference Search
2SA1942 datasheet
..2. Size:202K jmnic
2sa1942.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION With TO-3PL package Complement to type 2SC5199 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol ... See More ⇒
..3. Size:219K inchange semiconductor
2sa1942.pdf 

isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC5199 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RA... See More ⇒
8.1. Size:156K toshiba
2sa1943n.pdf 

2SA1943N Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 2SA1943N 2SA1943N 2SA1943N 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommended for 100-W high-fidelity audio frequency amplifier outpu... See More ⇒
8.2. Size:157K toshiba
2sa1941r 2sa1941o.pdf 

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle... See More ⇒
8.3. Size:133K toshiba
2sa1943.pdf 

2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit mm High collector voltage VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Coll... See More ⇒
8.4. Size:157K toshiba
2sa1941.pdf 

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle... See More ⇒
8.7. Size:487K fairchild semi
2sa1943 fjl4215.pdf 

January 2009 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A. High Power Dissipation 150watts. TO-264 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Ex... See More ⇒
8.8. Size:330K onsemi
2sa1943rtu 2sa1943otu fjl4215rtu fjl4215otu.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.9. Size:182K utc
2sa1943.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 TO-3PL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube 2SA... See More ⇒
8.10. Size:123K isahaya
2sa1946.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ... See More ⇒
8.11. Size:121K isahaya
2sa1947.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ... See More ⇒
8.12. Size:120K isahaya
2sa1945.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ... See More ⇒
8.13. Size:185K isahaya
2sa1948.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.14. Size:144K isahaya
2sa1944.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.15. Size:198K jmnic
2sa1943.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol ... See More ⇒
8.16. Size:196K jmnic
2sa1941.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol ... See More ⇒
8.17. Size:202K jmnic
2sa1940.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1940 DESCRIPTION With TO-3P(I) package Complement to type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol ... See More ⇒
8.18. Size:1367K jilin sino
2sc5198 2sa1941.pdf 

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO... See More ⇒
8.21. Size:219K nell
2sa1943bl.pdf 

RoHS 2SA1943BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -15A/-230V/150W 5.00 20.00 0.20 18.00 3.30 0.20 TO-3PL FEATURES High breakdown voltage, VCEO = -230V (min) Complementary to 2SC5200BL 0.60 3.20 TO-3PL package which can be installed to the 5.45 0.05 5.45 0.05 heat sink with one screw 1 2 3 APPLICATIONS S... See More ⇒
8.22. Size:208K nell
2sa1941b.pdf 

RoHS 2SA1941B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -10A/-140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO = -140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SC5198B B C E TO-3P package which can be installed to the ... See More ⇒
8.23. Size:866K kexin
2sa1946.pdf 

SMD Type Transistors PNP Transistors 2SA1946 1.70 0.1 Features Low collector saturation voltage High fT,fT=180MHz(typ) High collector current ICM=-1A 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5212 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 ... See More ⇒
8.24. Size:850K kexin
2sa1947.pdf 

SMD Type Transistors PNP Transistors 2SA1947 1.70 0.1 Features High fT,fT=100MHz(typ) High collector current ICM=-1.5A Small package for mounting 0.42 0.1 0.46 0.1 Complements to 2SC5214 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -2... See More ⇒
8.25. Size:862K kexin
2sa1945.pdf 

SMD Type Transistors PNP Transistors 2SA1945 1.70 0.1 Features High voltage High fT,fT=150MHz(typ) High collector current ICM=-600mA 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5211 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emi... See More ⇒
8.26. Size:1096K kexin
2sa1948.pdf 

SMD Type Transistors PNP Transistors 2SA1948 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-120V Complementary to 2SC5213 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V... See More ⇒
8.27. Size:980K kexin
2sa1944.pdf 

SMD Type Transistors PNP Transistors 2SA1944 1.70 0.1 Features High voltage Low collector-to-emitter saturation voltage. High hFE hFE=400 to 800 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5209 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Col... See More ⇒
8.28. Size:272K lzg
2sa1941 3ca1941.pdf 

2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications. 70W 2SC5198 3DA5198 Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
8.29. Size:848K cn evvo
2sa1943.pdf 

Silicon NPN transistor Features Power Amplifier Applications Complementary to 2SC5200 High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc... See More ⇒
8.30. Size:1244K cn evvo
2sa1941.pdf 

2SA1941 Silicon PNP transistor Power Amplifier Applications Complementary to 2SC5198 High collector voltage VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the applicatio of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to d... See More ⇒
8.31. Size:1285K cn sps
2sa1941t6tl.pdf 

2SA1941T6TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle... See More ⇒
8.32. Size:1806K cn sps
2sa1943t7tl.pdf 

2SA1943T7TL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -230 V CBO V Collector-... See More ⇒
8.33. Size:145K cn minos
2sa1943.pdf 

2SA1943 Minos High Power Products PNP TRANSISTORS Features Power Amplifier Applications Complementaryto2SC5200 Highcollector voltage VCEO=-230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change in temperature, etc.) may causethis pro... See More ⇒
8.34. Size:178K cn sptech
2sa1940r 2sa1940o.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.35. Size:427K cn sptech
2sa1941r 2sa1941o.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.36. Size:425K cn sptech
2sa1943r 2sa1943o.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒
8.37. Size:301K cn yw
2sa1941.pdf 

2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta... See More ⇒
8.38. Size:214K inchange semiconductor
2sa1943n.pdf 

isc Silicon PNP Power Transistor 2SA1943N DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency a... See More ⇒
8.39. Size:204K inchange semiconductor
2sa1943.pdf 

isc Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V =- 230V(Min) (BR)CEO Complement to Type 2SC5200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp... See More ⇒
8.40. Size:221K inchange semiconductor
2sa1941.pdf 

isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app... See More ⇒
8.41. Size:221K inchange semiconductor
2sa1940.pdf 

isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app... See More ⇒
Detailed specifications: 2SA1931, 2SA1932, 2SA1933, 2SA1934, 2SA1937, 2SA1939, 2SA1940, 2SA1941, 8050, 2SA1962, 2SA1971, 2SA1972, 2SA1986, 2SA1987, 2SA2034, 2SA2056, 2SA2058
Keywords - 2SA1942 pdf specs
2SA1942 cross reference
2SA1942 equivalent finder
2SA1942 pdf lookup
2SA1942 substitution
2SA1942 replacement