2SA1987 Specs and Replacement

Type Designator: 2SA1987

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 180 W

Maximum Collector-Base Voltage |Vcb|: 230 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 360 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO3PL

 2SA1987 Substitution

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2SA1987 datasheet

 ..1. Size:173K  toshiba

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2SA1987

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 ..2. Size:152K  jmnic

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2SA1987

JMnic Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified ou... See More ⇒

 ..3. Size:219K  inchange semiconductor

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2SA1987

isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp... See More ⇒

 8.1. Size:173K  toshiba

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2SA1987

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Detailed specifications: 2SA1939, 2SA1940, 2SA1941, 2SA1942, 2SA1962, 2SA1971, 2SA1972, 2SA1986, 2SD2499, 2SA2034, 2SA2056, 2SA2058, 2SA2059, 2SA2060, 2SA2061, 2SA2065, 2SA2066

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