All Transistors. 2SA2070 Datasheet

 

2SA2070 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA2070

SMD Transistor Code: 4C

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 Β°C

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: PW-MINI_SC62

2SA2070 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA2070 Datasheet (PDF)

1.1. 2sa2070.pdf Size:189K _toshiba

2SA2070
2SA2070

2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications Unit: mm DC-DC Converter Applications • High DC current gain: hFE = 200 to 500 (I = -0.1 A) C • Low collector-emitter saturation voltage: V = -0.20 V (max) CE (sat) • High-speed switching: t = 70 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collecto

4.1. 2sa2071.pdf Size:933K _rohm

2SA2070
2SA2070

Power transistor (?60V, ?3A) 2SA2071 ?Features ?Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 20ns at IC = ?3A) MPT3 2) Low saturation voltage, typically (Typ. : ?200mV at IC = ?2A, IB = ?0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5824 (1)Base(Gate) Each lead has same dimensions (2)Collector(Drain) ?Application

4.2. 2sa2072.pdf Size:129K _rohm

2SA2070
2SA2070

High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2072 Features Dimensions (Unit : mm) 1) High speed switching. ( tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically. CPT3 (SC-63) : (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC5825.

 4.3. 2sa2073.pdf Size:89K _rohm

2SA2070
2SA2070

2SA2073 Transistors High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = -3A) ATV 2) Low saturation voltage, typically. : (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the

4.4. 2sa2077.pdf Size:74K _panasonic

2SA2070
2SA2070

Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SC5845 0.40+0.10 Π²Π‚β€œ0.05 0.16+0.10 Π²Π‚β€œ0.06 3 Π’Β¦ Features Π²Π‚Ρž High forward current transfer ratio hFE Π²Π‚Ρž Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packing. 1.9Π’

 4.5. 2sa2074.pdf Size:72K _panasonic

2SA2070
2SA2070

Power Transistors 2SA2074 Silicon PNP epitaxial planar type Unit: mm 4.6±0.2 Power supply for Audio & Visual equipments 9.9±0.3 2.9±0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.2±0.1 ¦ Features • High-speed switching (tstg: storage time/tf: fall time is short) 1.4±0.2 • Low collector-emitter saturation voltage VCE(sat) 2.6±0.1 1.6±0.2 • Superior forwa

4.6. 2sa2075.pdf Size:71K _panasonic

2SA2070
2SA2070

Power Transistors 2SA2075 Silicon PNP epitaxial planar type Unit: mm Power supply for Audio & Visual equipments 10.0±0.2 5.0±0.1 1.0±0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ¦ Features 1.2±0.1 C 1.0 • High-speed switching (tstg: storage time/tf: fall time is short) 1.48±0.2 2.25±0.2 • Low collector-emitter saturation voltage VCE(sat) 0.65±0.1 • Super

4.7. 2sa2078.pdf Size:75K _panasonic

2SA2070
2SA2070

Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SC5846 0.33+0.05 0.10+0.05 –0.02 –0.02 3 ¦ Features • High forward current transfer ratio hFE 0.23+0.05 1 2 –0.02 • SSS-Mini type package, allowing downsizing of the equipment (0.40)(0.40) and automatic insertion through the tape packing and the maga- 0.80±0.05 1.20±0.05 zine

4.8. st2sa2071u.pdf Size:591K _semtech

2SA2070
2SA2070

ο»ΏST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pw = 100 ms) -ICP 6 A 0.5 PC W Collector Power Dissipation 2 1

4.9. 2sa2071-q.pdf Size:1003K _kexin

2SA2070
2SA2070

ο»ΏSMD Type Transistors PNP Transistors 2SA2071-Q SOT-89 Unit:mm 1.70 0.1 β–  Features ● Collector Current Capability IC=-3A ● Collector Emitter Voltage VCEO=-60V ● High speed switching. 0.42 0.1 ● Complements the 2SC5824 0.46 0.1 1.Base 2.Collector 3.Emitter β–  Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Colle

Datasheet: 2SA2056 , 2SA2058 , 2SA2059 , 2SA2060 , 2SA2061 , 2SA2065 , 2SA2066 , 2SA2069 , BF494 , 2SA2097 , 2SA2120 , 2SA2121 , 2SA2142 , 2SA2182 , 2SA2183 , 2SA2184 , 2SA2190 .

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