All Transistors. 2SA2142 Datasheet

 

2SA2142 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA2142

SMD Transistor Code: A2142

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 35 MHz

Collector Capacitance (Cc): 24 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: NEW-PW-MOLD

2SA2142 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA2142 Datasheet (PDF)

1.1. 2sa2142.pdf Size:154K _toshiba

2SA2142
2SA2142

2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = -600 V Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1

4.1. 2sa2140 2sc5993.pdf Size:79K _panasonic

2SA2142
2SA2142

Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT Unit : mm value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power savi

 5.1. 2sa2124-td-e.pdf Size:198K _update

2SA2142
2SA2142

Ordering number : EN7920B 2SA2124 Bipolar Transistor http://onsemi.com -30V, -2A, Low VCE(sat), PNP Single PCP Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Specifications Absolute Maximum Ratings at T

5.2. 2sa2169-tl-e.pdf Size:384K _update

2SA2142
2SA2142

2SA2169/2SC6017 Ordering number : EN8275A SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2169/2SC6017 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching ( ): 2SA

 5.3. 2sa2126-h.pdf Size:292K _update

2SA2142
2SA2142

Ordering number : EN7990A 2SA2126 Bipolar Transistor http://onsemi.com -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at Ta

5.4. 2sa2153-td-e.pdf Size:201K _update

2SA2142
2SA2142

Ordering number : EN8123A 2SA2153 Bipolar Transistor http://onsemi.com -50V, -2A, Low VCE(sat), PNP Single PCP Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT process • Low saturation voltage • Large current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions R

 5.5. 2sa2126-tl-e.pdf Size:337K _update

2SA2142
2SA2142

2SA2126 Ordering number : EN7990A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications 2SA2126 Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Specifications

5.6. 2sa2125-td-h.pdf Size:188K _update

2SA2142
2SA2142

Ordering number : EN7988B 2SA2125/2SC5964 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free

5.7. 2sa2188.pdf Size:122K _update

2SA2142
2SA2142



5.8. 2sa2119gp.pdf Size:107K _update

2SA2142
2SA2142

CHENMKO ENTERPRISE CO.,LTD 2SA2119GP SURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * A collector current is large. * Collector saturation voltage is low. VCE(sat)<=250mA At Ic=200mA/IB=10mA (1) CONSTRUCTION (3) * PNP Silicon Transistor (2) ( ) ( )

5.9. 2sa2112-an.pdf Size:519K _update

2SA2142
2SA2142

Ordering number : EN7379A 2SA2112 Bipolar Transistor http://onsemi.com -50V, -3A, Low VCE(sat), PNP Single NMP Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at Ta=2

5.10. 2sa2126-tl-h.pdf Size:292K _update

2SA2142
2SA2142

Ordering number : EN7990A 2SA2126 Bipolar Transistor http://onsemi.com -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at Ta

5.11. 2sa2127-ae.pdf Size:403K _update

2SA2142
2SA2142

Ordering number : EN8022A 2SA2127 Bipolar Transistor http://onsemi.com -50V, -2A, Low VCE(sat), PNP Single MP Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT process • Low saturation voltage • High current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions R

5.12. 2sa2169-e.pdf Size:384K _update

2SA2142
2SA2142

2SA2169/2SC6017 Ordering number : EN8275A SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2169/2SC6017 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching ( ): 2SA

5.13. 2sa2126-e.pdf Size:337K _update

2SA2142
2SA2142

2SA2126 Ordering number : EN7990A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications 2SA2126 Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Specifications

5.14. 2sa2119tgp.pdf Size:194K _update

2SA2142
2SA2142

CHENMKO ENTERPRISE CO.,LTD 2SA2119TGP SURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * A collector current is large. * Collector saturation voltage is low. VCE(sat)<=250mA 0.1 At Ic=200mA/IB=10mA 0.2±0.05 0.5 CONSTRUCTION 1.0±0.1 1.6

5.15. 2sa2125-td-e.pdf Size:188K _update

2SA2142
2SA2142

Ordering number : EN7988B 2SA2125/2SC5964 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free

5.16. 2sa2166.pdf Size:113K _update

2SA2142
2SA2142



5.17. 2sa2167.pdf Size:90K _update

2SA2142
2SA2142

2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Unit:mm OUTLINE DRAWING DESCRIPTION 4.6MAX 2SA2167 is a silicon PNP epitaxial type transistor. 1.6 1.5 It is designed with high voltage, high Collector current, high Collector dissipation. C E B FEATURE 0.53 ●High voltage VCEO=-60V MAX 1.5 0.48MAX 0.4 ●High Collector current IC=-2A 3.0 ●Lo

5.18. 2sa2186-an.pdf Size:526K _update

2SA2142
2SA2142

Ordering number : ENA0269A 2SA2186 Bipolar Transistor http://onsemi.com -50V, -2A, Low VCE(sat), PNP Single NMP Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at

5.19. 2sa2154mfv 071101.pdf Size:151K _toshiba

2SA2142
2SA2142

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 1.2 ± 0.05 • High voltage and high current 0.80 ± 0.05 : VCEO = -50 V, IC = -150 mA (max) • Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 • High hFE : hFE = 120~400 • Complementary to 2SC6026MFV 3

5.20. 2sa2154ct 090413.pdf Size:151K _toshiba

2SA2142
2SA2142

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm 0.6±0.05 • Excellent hFE linearity 0.5±0.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SC6026CT 3 Absolute Max

5.21. 2sa2195 090422.pdf Size:126K _toshiba

2SA2142
2SA2142

2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.1±0.1 Strobe Applications 1.7±0.1 • High DC current gain: hFE = 200 to 500 (IC = -0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) 1 • High-speed switching: tf = 90 ns (typ.) 2 3 Absolute Maximum Ratings

5.22. 2sa2154.pdf Size:145K _toshiba

2SA2142
2SA2142

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm • High voltage and high current : VCEO = -50 V, IC = -100 mA (max) • Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 1 • Complementary to 2SC6026 3 2 0.8±0.05 0.1±0.05 1.0±0.05 Ab

5.23. 2sa2184 090424.pdf Size:206K _toshiba

2SA2142
2SA2142

2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications Unit: mm • High voltage: VCEO = -550 V • High speed: tf = 40 ns (typ.) (IC = -0.5A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -550 V Collector-emitter voltage VCEO -550 V Emitter-base voltage VEBO -7 V DC IC -1

5.24. 2sa2121.pdf Size:158K _toshiba

2SA2142
2SA2142

2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Collector

5.25. 2sa2120 110201.pdf Size:177K _toshiba

2SA2142
2SA2142

2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm • Complementary to 2SC5948 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VCBO Collector-base voltage -200 V VCEO Collector-emitter voltage -200 V VEBO Emitter-base voltage -5 V

5.26. 2sa2182.pdf Size:166K _toshiba2

2SA2142
2SA2142

2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 80 MHz (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 230 V Collector-emitter voltage VCEO - 230 V Emitter-base voltage VEBO - 5 V DC IC - 1.0 A

5.27. 2sa2190.pdf Size:184K _toshiba2

2SA2142
2SA2142

 2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 180 V Collector-emitter voltage VCEO - 180 V Emitter-base voltage VEBO -

5.28. 2sa2183.pdf Size:179K _toshiba2

2SA2142
2SA2142

2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Unit: mm • Low collector-emitter saturation : VCE(sat) = -1.0 V(max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V DC IC -5.0 A Collector current

5.29. 2sa2125.pdf Size:43K _sanyo

2SA2142
2SA2142

Ordering number : ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA212

5.30. 2sa2117.pdf Size:40K _sanyo

2SA2142
2SA2142

Ordering number : ENN7906 2SA2117 / 2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features [2SA2117 / 2SC5934] 4.5 • Adoption of MBIT process. 10.0 2.8 • High-speed switching. 3.2 • Large current capacitance.

5.31. 2sa2153.pdf Size:254K _sanyo

2SA2142
2SA2142

Ordering number : ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor 2SA2153 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Rati

5.32. 2sa2124.pdf Size:91K _sanyo

2SA2142
2SA2142

Ordering number : EN7920A 2SA2124 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2124 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications

5.33. 2sa2169 2sc6017.pdf Size:61K _sanyo

2SA2142
2SA2142

Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching 2SA2169 / 2SC6017 Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum

5.34. 2sa2186.pdf Size:32K _sanyo

2SA2142
2SA2142

Ordering number : ENA0269 2SA2186 PNP Epitaxial Planar Silicon Transistor 2SA2186 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25

5.35. 2sa2126.pdf Size:54K _sanyo

2SA2142
2SA2142

Ordering number : ENN7990 2SA2126 PNP Epitaxial Planar Silicon Transistor 2SA2126 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter

5.36. 2sa2125 2sc5964.pdf Size:59K _sanyo

2SA2142
2SA2142

Ordering number : ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA212

5.37. 2sa2112.pdf Size:97K _sanyo

2SA2142
2SA2142

Ordering number : ENN7379 2SA2112 PNP Epitaxial Planar Silicon Transistors 2SA2112 High Current Switching Applications Applications Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mm motor drivers, strobes. 2064A [2SA2112] Features 2.5 1.45 Adoption of MBIT process. 6.9 1.0 Large current capacitance. Low collector-to-emitter saturation voltage. H

5.38. 2sa2127.pdf Size:33K _sanyo

2SA2142
2SA2142

Ordering number : ENN8022 2SA2127 PNP Epitaxial Planar Silicon Transistor 2SA2127 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Rat

5.39. 2sa2018 2sa2030 2sa2119k.pdf Size:139K _rohm

2SA2142
2SA2142

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each lea

5.40. 2sa2199.pdf Size:81K _rohm

2SA2142
2SA2142

2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit : mm) Small signal low frequency amplifier VMN3 Features 0.22 0.16 1) Excellent hFE linearity. (3) 2) Complements the 2SC6114. Structure (1) (2) PNP silicon epitaxial 0.37 0.17 0.35 planar transistor 0.6 (1) Base (2) Emitter Abbreviated symbol : P (3) Coll

5.41. 2sa2113.pdf Size:44K _rohm

2SA2142
2SA2142

2SA2113 Transistor Medium power transistor (-30V, -2A) 2SA2113 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2.8 1.6 TSMT3 2) Low saturation voltage, typically (Typ. : -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 (1)Base 0.3 0.6 Each lea

5.42. 2sa2164.pdf Size:421K _panasonic

2SA2142
2SA2142

Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification Unit: mm 0.33+0.05 0.10+0.05 –0.02 –0.02 ? Features 3 ? High transfer ratio fT ? SSS-Mini type package, allowing downsizing of the equipment and? automatic insertion through the tape packing. 0.23+0.05 1 2 –0.02 (0.40)(0.40) 0.80±0.05 ? Absolute Maximum Ratings Ta = 25°C

5.43. 2sa2101.pdf Size:60K _panasonic

2SA2142
2SA2142

Power Transistors 2SA2101 Silicon PNP epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forwa

5.44. 2sa2102.pdf Size:48K _panasonic

2SA2142
2SA2142

Power Transistors 2SA2102 Silicon PNP epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forwa

5.45. 2sa2151a.pdf Size:206K _sanken-ele

2SA2142
2SA2142

2-1 Transistors Specifications List by Part Number Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) min max (V) (V) (A) 2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SA1216 Audio, general-purpose 180 180

5.46. 2sa2151.pdf Size:100K _inchange_semiconductor

2SA2142
2SA2142

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -2

5.47. 2sa2126.pdf Size:1307K _kexin

2SA2142
2SA2142

SMD Type Transistors PNP Transistors 2SA2126 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● Collector Current Capability IC=-3A ● Collector Emitter Voltage VCEO=-50V 0.127 ● High current capacitance. +0.1 0.80-0.1 max ● Low collector-to-emitter saturation voltage ● High-speed switching. + 0.1 1 Base 2.3 0.60-

Datasheet: 2SA2061 , 2SA2065 , 2SA2066 , 2SA2069 , 2SA2070 , 2SA2097 , 2SA2120 , 2SA2121 , BC547C , 2SA2182 , 2SA2183 , 2SA2184 , 2SA2190 , 2SA2206 , 2SA2219 , 2SA2220 , 2SA940A .

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