2SA2183 Datasheet and Replacement

2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Unit: mm Low collector-emitter saturation : VCE(sat) = -1.0 Vmax Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -60 VEmitter-base voltage VEBO -7 VDC IC -5.0 ACollector current

2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications Unit: mm High voltage: VCEO = -550 V High speed: tf = 40 ns (typ.) (IC = -0.5A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -550 VCollector-emitter voltage VCEO -550 VEmitter-base voltage VEBO -7 VDC IC -1

2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 80 MHz (typ.) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO - 230 VCollector-emitter voltage VCEO - 230 VEmitter-base voltage VEBO - 5 VDC IC - 1.0 A

Ordering number : ENA02692SA2186PNP Epitaxial Planar Silicon Transistor2SA2186High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Rat

Ordering number : ENA0269A2SA2186Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single NMPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at