All Transistors. 2SC3709A Datasheet

 

2SC3709A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3709A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 180 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220NIS

 2SC3709A Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3709A Datasheet (PDF)

 ..1. Size:142K  toshiba
2sc3709a.pdf

2SC3709A
2SC3709A

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: V = 0.4 V (max) CE (sat) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitt

 ..2. Size:222K  inchange semiconductor
2sc3709a.pdf

2SC3709A
2SC3709A

isc Silicon NPN Power Transistor 2SC3709ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451AAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV

 7.1. Size:213K  toshiba
2sc3709.pdf

2SC3709A
2SC3709A

 7.2. Size:205K  inchange semiconductor
2sc3709.pdf

2SC3709A
2SC3709A

isc Silicon NPN Power Transistor 2SC3709DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

 8.1. Size:127K  sanyo
2sa1450 2sc3708.pdf

2SC3709A
2SC3709A

Ordering number:EN2217APNP/NPN Epitaxial Planar Silicon Transistor2SA1450/2SC3708Low-Frequency Driver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp, AF power amp.2003A High breakdown voltage : VCEO>80V[2SA1450/2SC3708]JEDEC : TO-92 B : Base( ) : 2SA1450 EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute

 8.2. Size:94K  sanyo
2sc3705.pdf

2SC3709A
2SC3709A

Ordering number:EN2146BNPN Epitaxial Planar Silicon Darlington Transistor2SC3705Printer Driver ApplicationsApplications Package Dimensions Switching of L load (motor drivers, printer drivers,unit:mmrelay drivers).2009B[2SC3705]Features High DC current gain. Large current capacityu and wide ASO. Contains a Zener diode across collector and base.1 : Emitter

 8.3. Size:42K  panasonic
2sc3707 e.pdf

2SC3709A
2SC3709A

Transistor2SC3707Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesPossible with the small current and low voltage.High transition frequency fT.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Absolute Max

 8.4. Size:38K  panasonic
2sc3707.pdf

2SC3709A
2SC3709A

Transistor2SC3707Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesPossible with the small current and low voltage.High transition frequency fT.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Absolute Max

 8.5. Size:41K  panasonic
2sc3704 e.pdf

2SC3709A
2SC3709A

Transistor2SC3704Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

 8.6. Size:37K  panasonic
2sc3704.pdf

2SC3709A
2SC3709A

Transistor2SC3704Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

 8.7. Size:923K  kexin
2sc3707.pdf

2SC3709A
2SC3709A

SMD Type TransistorsNPN Transistors2SC3707SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=10mA Collector Emitter Voltage VCEO=7V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collecto

 8.8. Size:927K  kexin
2sc3704.pdf

2SC3709A
2SC3709A

SMD Type TransistorsNPN Transistors2SC3704SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC36

 

 
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