All Transistors. 2SC3709A Datasheet

 

2SC3709A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3709A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 180 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220NIS

2SC3709A Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3709A Datasheet (PDF)

1.1. 2sc3709a.pdf Size:142K _toshiba

2SC3709A
2SC3709A

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: V = 0.4 V (max) CE (sat) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitt

3.1. 2sc3709.pdf Size:213K _toshiba

2SC3709A
2SC3709A



3.2. 2sc3709.pdf Size:271K _inchange_semiconductor

2SC3709A
2SC3709A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Col

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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