2SC4935 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SC4935
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220NIS

2SC4935 Transistor Equivalent Substitute - Cross-Reference Search

2SC4935 Datasheet (PDF)

..1. Size:176K toshiba
2sc4935.pdf

8.1. Size:743K 1
2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf

8.2. Size:122K sanyo
2sc4931.pdf

Ordering number:EN5295ANPN Epitaxial Planar Silicon Transistor2SC4931VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2106A High cutoff frequency : fT=9.0GHz typ.[2SC4931] Very small-sized package permitting 2SC4931- 0.750.30.6applied s

8.3. Size:41K rohm
2sc4938.pdf