2SC5173 Datasheet and Replacement

   Type Designator: 2SC5173
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.8 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TPL

2SC5173 Substitution

- BJT ⓘ Cross-Reference Search

2SC5173 Datasheet (PDF)

..1. Size:230K toshiba
2sc5173.pdf pdf_icon

8.1. Size:113K toshiba
2sc5171.pdf pdf_icon

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 180 VEmitter-base voltage VEBO

8.2. Size:172K toshiba
2sc5174.pdf pdf_icon

8.3. Size:235K toshiba
2sc5176.pdf pdf_icon

8.4. Size:191K toshiba
2sc5172.pdf pdf_icon

8.5. Size:183K toshiba
2sc5175.pdf pdf_icon

8.6. Size:56K nec
2sc5177.pdf pdf_icon

DATA SHEETSILICON TRANSISTOR2SC5177NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Current Consumption and High GainPACKAGE DIMENSIONS|S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.80.2 Mini-Mold package1.50.65+0.1 0.15EIAJ:

8.7. Size:57K nec
2sc5179.pdf pdf_icon

DATA SHEETSILICON TRANSISTOR2SC5179NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.10.1 Small Mini-Mold package1.250.1EIAJ: SC-

8.8. Size:82K nec
2sc5178.pdf pdf_icon

DATA SHEETSILICON TRANSISTOR2SC5178NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz(Units: mm)|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.8 +0.2 0.3 4-pin Mini-Mold package1.5 +

8.9. Size:472K blue-rocket-elect
2sc5171s.pdf pdf_icon

2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features 2SA1930S(BR3CA1930SQ) High fT, complementary pair with 2SA1930S(BR3CA1930SQ). / Applications General power an

8.10. Size:488K blue-rocket-elect
2sc5171i.pdf pdf_icon

2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features 2SA1930I(BR3CA1930I) High fT, complementary pair with 2SA1930I(BR3CA1930I). / Applications General power and d

8.11. Size:906K kexin
2sc5177.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC5177SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=3V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect

8.12. Size:170K inchange semiconductor
2sc5171.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5171DESCRIPTIONHigh Transition Frenquency : f =200MHz(Typ.)TComplementary to 2SA1930100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

8.13. Size:184K inchange semiconductor
2sc5174.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5174DESCRIPTIONSilicon NPN epitaxial typeLow Collector Saturation VoltageHigh transition frequencyComplementary to 2SA1932Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicatio

Datasheet: 2SC4935 , 2SC5000 , 2SC5075 , 2SC5076 , 2SC5122 , 2SC5154 , 2SC5171 , 2SC5172 , TIP32C , 2SC5174 , 2SC5176 , 2SC5196 , 2SC5197 , 2SC5198 , 2SC5199 , 2SC5201 , 2SC5208 .