2SC5197 Datasheet, Equivalent, Cross Reference Search

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5197DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1940100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidel

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5197 DESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= 2.0V(Min) @IC= 6AGood Linearity of hFEComplement to Type 2SA1940APPLICATIONS Power amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em

DATA SHEETSILICON TRANSISTOR2SC5194MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise2.10.2NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector CurrentIC = 100 mA 4-P

DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise1.60.1NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz0.80.1NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz2 Large Absolute Maximum Collector CurrentIC = 100 mA S

DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low NoiseNF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.22.8 0.3+0.2NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz1.5 0.1 Large Absolute Maximum Collect

DATA SHEETNPN SILICON RF TRANSISTOR2SC5191NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORCOMPACT MINI MOLDFEATURESPACKAGE DRAWING(Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise2.10.1NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Coll

Transistor2SC5190Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings

Transistor2SC5190Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltageVCEO

RoHS 2SC5198B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor10A/140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO =140V (min) 5.450.1 5.450.11.4Complementary to 2SA1941BB C ETO-3P package which can be installed to the heat

SMD Type TransistorsNPN Transistors2SC5191SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=6V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

2SC5198Silicon NPN transistorPower Amplifier Applications Complementary to 2SA1941 High collector voltage:VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to

2SC5198T7TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5199DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOComplement to Type 2SA1942100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco

isc Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage appli

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5191DESCRIPTIONLow Voltage Operation ,Low Phase DistortionLow NoiseNF = 1.5 dB TYP. @V = 3 V, I = 7 mA, f = 2 GHzCE CNF = 1.7 dB TYP. @V = 1 V, I = 3 mA, f = 2 GHzCE CLarge Absolute Maximum Collector CurrentI = 100 mAC100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and re

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5196DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 5ACE(sat) CGood Linearity of hFEComplement to Type 2SA1939100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidel