2SC5199 PDF and Equivalents Search

 ..1. Size:170K  toshiba

 2sc5199.pdf

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 ..2. Size:182K  inchange semiconductor

 2sc5199.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5199 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Complement to Type 2SA1942 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco... See More ⇒

 8.1. Size:148K  toshiba

 2sc5198.pdf

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em... See More ⇒

 8.2. Size:148K  toshiba

 2sc5198r 2sc5198o.pdf

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em... See More ⇒

 8.3. Size:171K  toshiba

 2sc5197.pdf

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 8.4. Size:170K  toshiba

 2sc5196.pdf

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 8.5. Size:65K  nec

 2sc5194.pdf

DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise 2.1 0.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.25 0.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-P... See More ⇒

 8.6. Size:54K  nec

 2sc5195.pdf

DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise 1.6 0.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.8 0.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA S... See More ⇒

 8.7. Size:68K  nec

 2sc5192.pdf

DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collect... See More ⇒

 8.8. Size:56K  nec

 2sc5191.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA ... See More ⇒

 8.9. Size:55K  nec

 2sc5193.pdf

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.1 0.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.25 0.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Coll... See More ⇒

 8.10. Size:40K  panasonic

 2sc5190 e.pdf

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings... See More ⇒

 8.11. Size:37K  panasonic

 2sc5190.pdf

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings... See More ⇒

 8.12. Size:1367K  jilin sino

 2sc5198 2sa1941.pdf

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO... See More ⇒

 8.13. Size:208K  nell

 2sc5198b.pdf

RoHS 2SC5198B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 10A/140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO =140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SA1941B B C E TO-3P package which can be installed to the heat... See More ⇒

 8.14. Size:933K  kexin

 2sc5191.pdf

SMD Type Transistors NPN Transistors 2SC5191 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector... See More ⇒

 8.15. Size:1263K  cn evvo

 2sc5198.pdf

2SC5198 Silicon NPN transistor Power Amplifier Applications Complementary to 2SA1941 High collector voltage VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to ... See More ⇒

 8.16. Size:1285K  cn sps

 2sc5198t7tl.pdf

2SC5198T7TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒

 8.17. Size:427K  cn sptech

 2sc5198r 2sc5198o.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒

 8.18. Size:516K  cn sptech

 2sc5197r 2sc5197o.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5197 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 2.0V(Min) @IC= 6A Good Linearity of hFE Complement to Type 2SA1940 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME... See More ⇒

 8.19. Size:441K  cn yw

 2sc5198.pdf

2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V... See More ⇒

 8.20. Size:218K  inchange semiconductor

 2sc5198.pdf

isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage appli... See More ⇒

 8.21. Size:185K  inchange semiconductor

 2sc5197.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1940 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidel... See More ⇒

 8.22. Size:177K  inchange semiconductor

 2sc5191.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5191 DESCRIPTION Low Voltage Operation ,Low Phase Distortion Low Noise NF = 1.5 dB TYP. @V = 3 V, I = 7 mA, f = 2 GHz CE C NF = 1.7 dB TYP. @V = 1 V, I = 3 mA, f = 2 GHz CE C Large Absolute Maximum Collector Current I = 100 mA C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and re... See More ⇒

 8.23. Size:184K  inchange semiconductor

 2sc5196.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1939 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidel... See More ⇒