2SC5242 Datasheet and Replacement

2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm High Collector breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector

January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor 2SC5242DESCRIPTIONHigh Collector Breakdown Voltage-: V = 230V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SA1962Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applications

Ordering number : ENA1074 2SC5245ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5245AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number:EN5184ANPN Epitaxial Planar Silicon Transistor2SC5245UHF to S-Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2059B2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5245] High cutoff frequency : fT=11GHz typ.0.3 Low-voltage, low-current operation0.

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

Ordering number : ENA1074A2SC5245ARF Transistorhttp://onsemi.com10V, 30mA, fT=8GHz, NPN Single MCPFeatures Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain 2 : S21e =10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz)

Power Transistors2SC5244, 2SC5244ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching 1.5Wide area of safe operation (ASO)1.52.0 0.32.7 0.33.0 0.3Absolute Maximum Ratings (TC=25

Power Transistors2SC5243Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching 1.5Wide area of safe operation (ASO)1.52.0 0.32.7 0.33.0 0.3Absolute Maximum Ratings (TC=25C)1.0

2SC5247Silicon NPN EpitaxialADE-208-2811st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 13.5 GHz typ High gain, low noise figurePG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5247Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas

2SC5246Silicon NPN EpitaxialADE-208-2641st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5246Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas

2SC5249Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC5249Symbol 2SC5249 Symbol Conditions UnitUnit0.24.20.210.1c0.52.8100maxVCBO 600 ICBO VCB=600V AV100maxVC

isc Silicon NPN Power Transistor 2SC5244DESCRIPTIONHigh breakdown voltage, and high reliabilityWide area of safe operationHigh-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SC5243DESCRIPTIONCollectorEmitter Sustaining VoltageV =1700 V(Min)CEOLow Collector Saturation Voltage: V = 3V(Max.)@ I = 2.8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon NPN Power Transistor 2SC5249DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 600V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

isc Silicon NPN Power Transistors 2SC5241DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC5248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SA1964Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIM