2SC5549 Datasheet and Replacement

2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 370 V CEO High DC current gain: h = 60 (min) (I = 0.2 A) FE CMaximum Ra

2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 40 (min) (I = 0.2 A) FE CMaximum

Ordering number:ENN6337NPN Epitaxial Planar Silicon Transistor2SC5541UHF to S BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=2GHz).unit:mm2 High gain : S21e =10dB typ (f=2GHz).2159 High cutoff frequency : fT=13GHz typ.[2SC5541] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.10.25

Ordering number:ENN6280NPN Epitaxial Planar Silicon Transistor2SC5540UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions High cutoff frequency : fT=10GHz typ.unit:mm2 High gain : S21e =13dB typ (f=1GHz).2159 Low noise : NF=1.3dB typ (f=1GHz).[2SC5540] Small Cob : Cob=0.4pF typ. Ultrasmall, slim flat-lead package.1.

Power Transistors2SC5546Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum

2SC5545Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-746 (Z)1st. EditionJan. 1999Features Excellent inter modulation characteristic High power gain and low noise figure ;PG=16dB typ. , NF=1.1dB typ. at f=900MHzOutlineMPAK-42314 1. Collector2. Emitter3. Base4. EmitterNote: Marking is ZS-.2SC5545Absolute Maximum Ratings (Ta = 25

2SC5544Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-691 (Z)1st. EditionNov. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is YZ-.2SC5544Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to bas

2SC5543Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-690 (Z)1st. EditionNov. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is YA-.2SC5543Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to bas

SMD Type TransistorsNPN Transistors2SC5548ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High speed switching High collector breakdown voltage High DC current gain0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Sym

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5548DESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current swi

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5548ADESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters and