2SC6072 Specs and Replacement
Type Designator: 2SC6072
SMD Transistor Code: C6072
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO220SIS
2SC6072 Substitution
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2SC6072 datasheet
2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-ba... See More ⇒
2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160... See More ⇒
2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitt... See More ⇒
Detailed specifications: 2SC6033, 2SC6034, 2SC6040, 2SC6042, 2SC6052, 2SC6060, 2SC6061, 2SC6062, TIP31, 2SC6075, 2SC6076, 2SC6077, 2SC6078, 2SC6079, 2SC6087, 2SC6124, 2SC6125
Keywords - 2SC6072 pdf specs
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