TPC6503
Datasheet, Equivalent, Cross Reference Search
Type Designator: TPC6503
SMD Transistor Code: H2C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 18
pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: VS6
TPC6503
Transistor Equivalent Substitute - Cross-Reference Search
TPC6503
Datasheet (PDF)
..1. Size:190K toshiba
tpc6503.pdf 
TPC6503 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6503 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri
8.1. Size:157K toshiba
tpc6504.pdf
TPC6504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6504 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain : hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage : VCE (sat) = 0.17 V (max) High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characte
8.2. Size:142K toshiba
tpc6501 .pdf
TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris
8.3. Size:134K toshiba
tpc6501.pdf
TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25C) Characteristics Symb
8.4. Size:186K toshiba
tpc6502.pdf
TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
