TPC6602 Datasheet. Specs and Replacement

Type Designator: TPC6602  📄📄 

SMD Transistor Code: H3B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: VS6

  📄📄 Copy 

 TPC6602 Substitution

- BJT ⓘ Cross-Reference Search

 

TPC6602 datasheet

 ..1. Size:150K  toshiba

 tpc6602.pdf pdf_icon

TPC6602

TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteri... See More ⇒

 8.1. Size:158K  toshiba

 tpc6604.pdf pdf_icon

TPC6602

TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage VCE (sat) = -0.23 V (max) High-speed switching tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating ... See More ⇒

 8.2. Size:151K  toshiba

 tpc6601.pdf pdf_icon

TPC6602

TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6601 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni... See More ⇒

 8.3. Size:156K  toshiba

 tpc6603.pdf pdf_icon

TPC6602

TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications Unit mm DC/DC Converter Applications Strobe Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation VCE (sat) = -0.19 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol R... See More ⇒

SHOW MORE

Detailed specifications: 2SC6139, 2SC6140, 2SC6142, TPC6501, TPC6502, TPC6503, TPC6504, TPC6601, 2SC5198, TPC6603, TPC6604, TPC6701, TPC6D03, TPCP8501, TPCP8504, TPCP8505, TPCP8507

Keywords - TPC6602 pdf specs

 TPC6602 cross reference

 TPC6602 equivalent finder

 TPC6602 pdf lookup

 TPC6602 substitution

 TPC6602 replacement