TPC6602
Datasheet, Equivalent, Cross Reference Search
Type Designator: TPC6602
SMD Transistor Code: H3B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 10
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 12
pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: VS6
TPC6602
Transistor Equivalent Substitute - Cross-Reference Search
TPC6602
Datasheet (PDF)
..1. Size:150K toshiba
tpc6602.pdf
TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri
8.1. Size:158K toshiba
tpc6604.pdf
TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain : hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage : VCE (sat) = -0.23 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating
8.2. Size:151K toshiba
tpc6601.pdf
TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6601 High-Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni
8.3. Size:156K toshiba
tpc6603.pdf
TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications Unit: mmDC/DC Converter Applications Strobe Flash Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol R
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