All Transistors. TPC6602 Datasheet

 

TPC6602 Datasheet and Replacement


   Type Designator: TPC6602
   SMD Transistor Code: H3B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: VS6

 TPC6602 Transistor Equivalent Substitute - Cross-Reference Search

   

TPC6602 Datasheet (PDF)

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TPC6602

TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteri... See More ⇒

 8.1. Size:158K  toshiba
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TPC6602

TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage VCE (sat) = -0.23 V (max) High-speed switching tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating ... See More ⇒

 8.2. Size:151K  toshiba
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TPC6602

TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6601 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni... See More ⇒

 8.3. Size:156K  toshiba
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TPC6602

TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications Unit mm DC/DC Converter Applications Strobe Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation VCE (sat) = -0.19 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol R... See More ⇒

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Datasheet: 2SC6139 , 2SC6140 , 2SC6142 , TPC6501 , TPC6502 , TPC6503 , TPC6504 , TPC6601 , 2SC5198 , TPC6603 , TPC6604 , TPC6701 , TPC6D03 , TPCP8501 , TPCP8504 , TPCP8505 , TPCP8507 .

History: SUR538J | KRC661E | UN6219 | KF2000 | AC552 | MT0493 | KRC653U

Keywords - TPC6602 transistor datasheet

 TPC6602 cross reference
 TPC6602 equivalent finder
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