TPC6604 PDF and Equivalents Search

 

TPC6604 Specs and Replacement

Type Designator: TPC6604

SMD Transistor Code: H3D

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: VS6

 TPC6604 Substitution

- BJT ⓘ Cross-Reference Search

 

TPC6604 datasheet

 ..1. Size:158K  toshiba

tpc6604.pdf pdf_icon

TPC6604

TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage VCE (sat) = -0.23 V (max) High-speed switching tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating ... See More ⇒

 8.1. Size:150K  toshiba

tpc6602.pdf pdf_icon

TPC6604

TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteri... See More ⇒

 8.2. Size:151K  toshiba

tpc6601.pdf pdf_icon

TPC6604

TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6601 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni... See More ⇒

 8.3. Size:156K  toshiba

tpc6603.pdf pdf_icon

TPC6604

TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications Unit mm DC/DC Converter Applications Strobe Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation VCE (sat) = -0.19 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol R... See More ⇒

Detailed specifications: 2SC6142 , TPC6501 , TPC6502 , TPC6503 , TPC6504 , TPC6601 , TPC6602 , TPC6603 , D965 , TPC6701 , TPC6D03 , TPCP8501 , TPCP8504 , TPCP8505 , TPCP8507 , TPCP8510 , TPCP8511 .

Keywords - TPC6604 pdf specs

 TPC6604 cross reference

 TPC6604 equivalent finder

 TPC6604 pdf lookup

 TPC6604 substitution

 TPC6604 replacement

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 

Popular searches

2sc945 | irfp250n | irf9540n | bd139 datasheet | irf9640 | 2n3053 | a1015 | mpsa42

 

 

↑ Back to Top
.