TPCP8505 Datasheet. Specs and Replacement

Type Designator: TPCP8505  📄📄 

SMD Transistor Code: 8505

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: PS8

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TPCP8505 datasheet

 ..1. Size:210K  toshiba

tpcp8505.pdf pdf_icon

TPCP8505

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolu... See More ⇒

 7.1. Size:227K  toshiba

tpcp8501.pdf pdf_icon

TPCP8505

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 100 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolute Maximum Ratings (Ta =... See More ⇒

 7.2. Size:171K  toshiba

tpcp8507.pdf pdf_icon

TPCP8505

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 120 300 (IC = 0.1 A) Low collector-emitter saturation voltage VCE(sat) = 0.14 V (max) High-speed switching tf = 0.2 s (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 Absolute Maximum ... See More ⇒

 7.3. Size:196K  toshiba

tpcp8504.pdf pdf_icon

TPCP8505

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 5 8 High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 A 0... See More ⇒

Detailed specifications: TPC6601, TPC6602, TPC6603, TPC6604, TPC6701, TPC6D03, TPCP8501, TPCP8504, 2SA1015, TPCP8507, TPCP8510, TPCP8511, TPCP8601, TPCP8602, TPCP8603, TPCP8604, TPCP8701

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