All Transistors. TTA0002 Datasheet

 

TTA0002 Datasheet, Equivalent, Cross Reference Search

Type Designator: TTA0002

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 180 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 18 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 410 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3PL

TTA0002 Transistor Equivalent Substitute - Cross-Reference Search

 

TTA0002 Datasheet (PDF)

1.1. tta0002 en datasheet 090611.pdf Size:187K _toshiba2

TTA0002
TTA0002

TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 0 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -160 V (min) Complementary to TTC0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-em

4.1. tta0001 en datasheet 090611.pdf Size:160K _toshiba2

TTA0002
TTA0002

TTA0001 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 0 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -160 V (min.) Complementary to TTC0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-em

5.1. tta003.pdf Size:178K _update

TTA0002
TTA0002

TTA003 Bipolar Transistors Silicon PNP Epitaxial Type TTA003 TTA003 TTA003 TTA003 1. Applications 1. Applications 1. Applications 1. Applications • Power Amplifiers • Power Switching 2. Features 2. Features 2. Features 2. Features (1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packa

5.2. tta004b.pdf Size:178K _update

TTA0002
TTA0002

TTA004B Bipolar Transistors Silicon PNP Epitaxial Type TTA004B TTA004B TTA004B TTA004B 1. Applications 1. Applications 1. Applications 1. Applications • Audio-Frequency Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ.) (4) High tran

5.3. tta009.pdf Size:219K _toshiba2

TTA0002
TTA0002

TTA009 Bipolar Transistors Silicon PNP Epitaxial Type TTA009 TTA009 TTA009 TTA009 1. Applications 1. Applications 1. Applications 1. Applications • Power Amplifiers • Power Switching 2. Features 2. Features 2. Features 2. Features (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1

5.4. tta007 en datasheet 100208.pdf Size:198K _toshiba2

TTA0002
TTA0002

TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications High DC current gain : hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage : VCE(sat) = -0.2 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collect

5.5. tta008b.pdf Size:313K _toshiba2

TTA0002
TTA0002

TTA008B Bipolar Transistors Silicon PNP Epitaxial Type TTA008B TTA008B TTA008B TTA008B 1. Applications 1. Applications 1. Applications 1. Applications • Power Amplifiers • Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A)

5.6. tta005.pdf Size:172K _toshiba2

TTA0002
TTA0002

TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 TTA005 TTA005 TTA005 1. Applications 1. Applications 1. Applications 1. Applications • High-Speed Switching • DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -

5.7. tta006b.pdf Size:602K _toshiba2

TTA0002
TTA0002

TTA006B バイポーラトランジスタ シリコンPNPエピタキシャル形 TTA006B TTA006B TTA006B TTA006B 1. 用途 1. 用途 1. 用途 1. 用途 • 電力増幅用 • オーディオアンプドライブ段増幅用 2. 特長 2. 特長 2. 特長 2. 特長 (1) 高耐圧です : VCEO = -230 V (最小) (2) コレクタ出力容量が小さい : Cob = 30 pF (標準) (3)

Datasheet: TPCP8602 , TPCP8603 , TPCP8604 , TPCP8701 , TPCP8901 , TPCP8H01 , TPCP8H02 , TTA0001 , 2N2905 , TTA003 , TTA004B , TTA007 , TTA1943 , TTC0001 , TTC0002 , TTC003 , TTC004 .

 


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