TTC0001 Datasheet and Replacement

TTC0001 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTA0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCo

TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTA0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCol

TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit: mmHigh-Speed Switching Applications DC-DC Converter Applications High DC current gain: hFE = 400 to1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

TTC005Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC005TTC005TTC005TTC0051. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A)(2) High-speed switc

TTC004 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC004 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Complementary to TTA004 Small collector output capacitance : Cob = 12 pF (typ.) High transition frequency : fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitColl

TTC008Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC008TTC008TTC008TTC0081. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V(2) High DC c

TTC004BBipolar Transistors Silicon NPN Epitaxial TypeTTC004BTTC004BTTC004BTTC004B1. Applications1. Applications1. Applications1. Applications Audio-Frequency Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 160 V (min)(2) Complementary to TTA004B(3) Small collector output capacitance: Cob = 12 pF (typ.)(4) High trans

TTC009 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 Power Amplifier Applications Unit: mm Power Switching Applications Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCE