TTC005 Datasheet, Equivalent, Cross Reference Search
Type Designator: TTC005
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 285 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: PW-MINI
TTC005 Transistor Equivalent Substitute - Cross-Reference Search
TTC005 Datasheet (PDF)
ttc005.pdf
TTC005Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC005TTC005TTC005TTC0051. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A)(2) High-speed switc
ttc007.pdf
TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit: mmHigh-Speed Switching Applications DC-DC Converter Applications High DC current gain: hFE = 400 to1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit
ttc0001.pdf
TTC0001 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTA0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCo
ttc004.pdf
TTC004 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC004 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Complementary to TTA004 Small collector output capacitance : Cob = 12 pF (typ.) High transition frequency : fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitColl
ttc008.pdf
TTC008Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC008TTC008TTC008TTC0081. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V(2) High DC c
ttc004b.pdf
TTC004BBipolar Transistors Silicon NPN Epitaxial TypeTTC004BTTC004BTTC004BTTC004B1. Applications1. Applications1. Applications1. Applications Audio-Frequency Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 160 V (min)(2) Complementary to TTA004B(3) Small collector output capacitance: Cob = 12 pF (typ.)(4) High trans
ttc0002.pdf
TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTA0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCol
ttc009.pdf
TTC009 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 Power Amplifier Applications Unit: mm Power Switching Applications Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
