2SC5095 Specs and Replacement
Type Designator: 2SC5095
SMD Transistor Code: MER_MEO
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 10000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: USM
- BJT ⓘ Cross-Reference Search
2SC5095 datasheet
..1. Size:295K toshiba
2sc5095.pdf 
2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V... See More ⇒
8.1. Size:126K 1
2sc509.pdf
http //www.Datasheet4U.com http //www.Datasheet4U.com http //www.Datasheet4U.com http //www.Datasheet4U.com ... See More ⇒
8.4. Size:473K toshiba
2sc5097.pdf
2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V ... See More ⇒
8.5. Size:469K toshiba
2sc5091.pdf
2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V ... See More ⇒
8.6. Size:125K toshiba
2sc5096ft.pdf
2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.... See More ⇒
8.7. Size:296K toshiba
2sc5094.pdf
2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V... See More ⇒
8.8. Size:466K toshiba
2sc5090.pdf
2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V ... See More ⇒
8.9. Size:296K toshiba
2sc5096.pdf
2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V... See More ⇒
8.10. Size:300K toshiba
2sc5093.pdf
2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V... See More ⇒
8.11. Size:298K toshiba
2sc5098.pdf
2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V ... See More ⇒
8.12. Size:125K toshiba
2sc5091ft.pdf
2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.5... See More ⇒
8.13. Size:475K toshiba
2sc5092.pdf
2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V... See More ⇒
8.14. Size:188K jmnic
2sc5099.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5099 DESCRIPTION With TO-3PML package Complement to type 2SA1907 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag... See More ⇒
8.15. Size:24K sanken-ele
2sc5099.pdf
2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC5099 Unit Symbol Conditions 2SC5099 Unit 0.2 0.2 5.5 15.6 0.2 VCBO 120 V ICBO VCB=120V 10max A 3.45 VCEO 80 V IEBO VEB=6V 10max A VE... See More ⇒
8.16. Size:1529K kexin
2sc5094.pdf
SMD Type Transistors NPN Transistors 2SC5094 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
8.17. Size:185K inchange semiconductor
2sc5090.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5090 DESCRIPTION High Gain Bandwidth Product f = 10 GHz TYP. T High Gain, Low Noise Figure S 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applica... See More ⇒
8.18. Size:195K inchange semiconductor
2sc5099.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5099 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1907 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM ... See More ⇒
Detailed specifications: 2SC5066, 2SC5084, 2SC5085, 2SC5086, 2SC5087, 2SC5087R, 2SC5088, 2SC5092, BD140, 2SC5096, 2SC5106, 2SC5107, 2SC5108, 2SC5317FT, 2SC5319, MT3S03AU, MT3S04AU
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