2SB1642 PDF and Equivalents Search

 ..1. Size:180K  toshiba

 2sb1642.pdf

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 ..2. Size:194K  jmnic

 2sb1642.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION With TO-220F package Low collector saturation voltage VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS Audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and... See More ⇒

 ..3. Size:210K  inchange semiconductor

 2sb1642.pdf

isc Silicon PNP Power Transistor 2SB1642 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2.5A, I = -0.25A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio f... See More ⇒

 8.1. Size:189K  toshiba

 2sb1640.pdf

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 8.2. Size:182K  toshiba

 2sb1641.pdf

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 8.3. Size:48K  rohm

 2sb1644.pdf

2SB1644 Transistors Power Transistor (-80V, -4A) 2SB1644 Features External dimensions (Units mm) 1) Low saturation voltage. 13.1 3.2 (Typ. VCE(sat) = -0.5V at IC / IB = -3A / -0.3A) 2) Excellent DC current gain characteristics. 8.8 Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V 0.5Min... See More ⇒

 8.4. Size:1165K  rohm

 2sb1644jfra.pdf

2SB1644JFRA 2SB1644J Datasheet PNP -4A -80V Power Transistor AEC-Q101 Qualified Outline LPT(S) (D2-PAK) Parameter Value Collector VCEO 80V IC 4A Base Emitter 2SB1644J 2SB1644JFRA Features (SC-83) 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Inner circuit Collector Applicatio... See More ⇒

 8.5. Size:260K  rohm

 2sb1644j.pdf

2SB1644J Datasheet PNP -4A -80V Power Transistor Outline LPT(S) (D2-PAK) Parameter Value Collector VCEO 80V IC 4A Base Emitter 2SB1644J Features (SC-83) 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Inner circuit Collector Applications Automotive power driver , LED driver Bas... See More ⇒

 8.6. Size:56K  panasonic

 2sb1643.pdf

Power Transistors 2SB1643 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High collector to emitter VCEO High collector power dissipation PC 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54 0.3 the printed circuit board, etc. of small electronic equipment. ... See More ⇒

 8.7. Size:54K  panasonic

 2sb1645.pdf

Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit mm For power amplification 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features Satisfactory forward current transfer ratio hFE characteristics Wide area of safe operation (ASO) 5 5 Optimum for the output stage of a HiFi audio amplifier (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum... See More ⇒

 8.8. Size:147K  jmnic

 2sb1640.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1640 DESCRIPTION With ITO-220 package Low collector saturation voltage Complement to type 2SD2525 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI... See More ⇒

 8.9. Size:160K  jmnic

 2sb1647.pdf

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION With TO-3PN package Complement to type 2SD2560 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER ... See More ⇒

 8.10. Size:29K  sanken-ele

 2sb1648.pdf

E (70 ) B Darlington 2SB1648 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application Audio, Series Regulator and General Purpose (Ta=25 C) External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 150 V ICBO VCB= 150... See More ⇒

 8.11. Size:29K  sanken-ele

 2sb1647.pdf

E (70 ) B Darlington 2SB1647 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Ratings Unit Conditions 0.2 4.8 0.4 15.6 VCBO 150 V VCB= 15... See More ⇒

 8.12. Size:30K  sanken-ele

 2sb1649.pdf

E (70 ) B Darlington 2SB1649 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions Ratings Symbol Ratings Unit Unit 0.2 0.2 5.5 15.6 ICBO VCBO 150 V VCB... See More ⇒

 8.13. Size:1128K  kexin

 2sb1643.pdf

SMD Type Transistors PNP Transistors 2SB1643 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector to emitter VCEO High collector power dissipation PC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒

 8.14. Size:207K  inchange semiconductor

 2sb1640.pdf

isc Silicon PNP Power Transistor 2SB1640 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector to Emitter Saturation Voltage V = -1.5V(Max.)@I = -2A CE(sat) C Complement to Type 2SD2525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and gene... See More ⇒

 8.15. Size:239K  inchange semiconductor

 2sb1647.pdf

isc Silicon PNP Darlington Power Transistor 2SB1647 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = -10A, V = -4V) FE C CE Low Collector Saturation Voltage- V = -2.5V(Max)@ (I = -10A, I = -10mA) CE(sat) C B Complement to Type 2SD2560 Minimum Lot-to-Lot variations for robust device performance and re... See More ⇒

 8.16. Size:221K  inchange semiconductor

 2sb1649.pdf

isc Silicon PNP Darlington Power Transistor 2SB1649 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -10A CE(sat) C Complement to Type 2SD2561 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,series regulator and general pu... See More ⇒