All Transistors. 2SD2480 Datasheet

 

2SD2480 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD2480
   SMD Transistor Code: D2480
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.3 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TPS

 2SD2480 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD2480 Datasheet (PDF)

 ..1. Size:179K  toshiba
2sd2480.pdf

2SD2480 2SD2480

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

 8.1. Size:167K  toshiba
2sd2481.pdf

2SD2480 2SD2480

2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Characteristics

 8.2. Size:70K  panasonic
2sd2486.pdf

2SD2480 2SD2480

Power Transistors2SD2486Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High forward current transfer ratio hFE which has satisfactorylinearity 3.1 0.1Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat si

 8.3. Size:355K  no
2sd2488.pdf

2SD2480 2SD2480

100 Max200 A)100 Max200 V 6500-20000 (P) (Y). . .V V Max120 TY P 10 0

 8.4. Size:219K  inchange semiconductor
2sd2488.pdf

2SD2480 2SD2480

Inchange Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2488DESCRIPTIONWith TO-3PN packageDARLINGTONHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio ,regulator and general purposeAbsolute maximum ratings(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBO

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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