2N1176A Specs and Replacement
Type Designator: 2N1176A
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.3 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
2N1176A Substitution
- BJT ⓘ Cross-Reference Search
2N1176A datasheet
Detailed specifications: 2N1171, 2N1172, 2N1173, 2N1174, 2N1175, 2N1175A, 2N1175B, 2N1176, TIP122, 2N1176B, 2N1177, 2N1178, 2N1179, 2N118, 2N1180, 2N1182, 2N1183
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