2SA608N Datasheet and Replacement
Type Designator: 2SA608N
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: NPA
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2SA608N Datasheet (PDF)
2sa608n 2sc536n.pdf

Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441
2sa608n.pdf

2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G HAPPLICATIONS EmitterCollector Capable of being used in the low frequency to Base Jhigh frequency range. A DMillimeterREF.B Min.
2sa608 2sc536n.pdf

Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SD667L-B | TIP35BF | 3DA608B | TIP36CT4TL | 2N4249 | 2N2225 | 3DA608C
Keywords - 2SA608N transistor datasheet
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History: 2SD667L-B | TIP35BF | 3DA608B | TIP36CT4TL | 2N4249 | 2N2225 | 3DA608C



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