All Transistors. F5H2201 Datasheet

 

F5H2201 Datasheet and Replacement


   Type Designator: F5H2201
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 195 MHz
   Collector Capacitance (Cc): 85 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO220FI5H
 

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F5H2201 Datasheet (PDF)

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F5H2201

Ordering number : ENA0403 F5H2201SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed SwitchingF5H2201ApplicationsApplications High-speed switching applications (switching regulator, driver circuit).Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KRC117M | 2SC1640

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