All Transistors. F5H2201 Datasheet

 

F5H2201 Datasheet, Equivalent, Cross Reference Search


   Type Designator: F5H2201
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 195 MHz
   Collector Capacitance (Cc): 85 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO220FI5H

 F5H2201 Transistor Equivalent Substitute - Cross-Reference Search

   

F5H2201 Datasheet (PDF)

 ..1. Size:57K  sanyo
 f5h2201.pdf

F5H2201 F5H2201

Ordering number : ENA0403 F5H2201SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed SwitchingF5H2201ApplicationsApplications High-speed switching applications (switching regulator, driver circuit).Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top