MCH6123
Datasheet, Equivalent, Cross Reference Search
Type Designator: MCH6123
SMD Transistor Code: AZ
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 390
MHz
Collector Capacitance (Cc): 24
pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package:
MCPH6
MCH6123
Transistor Equivalent Substitute - Cross-Reference Search
MCH6123
Datasheet (PDF)
..1. Size:231K sanyo
mch6123.pdf
MCH6123Ordering number : ENA1291SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorMCH6123High-Current Switching ApplicationsApplications DC-DC converter, relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasm
8.1. Size:240K sanyo
mch6124.pdf
MCH6124Ordering number : ENA1605SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorMCH6124Load Switch ApplicationsApplications Load switch, DC-DC converter, motor drivers, charger.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall-sized package
8.2. Size:240K sanyo
mch6122.pdf
MCH6122Ordering number : ENA1287SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorMCH6122DC / DC Converter AmplifierApplications Relay drivers, lamp drivers, motor drivers, charger circuit.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall-size
8.3. Size:240K sanyo
mch6121.pdf
MCH6121Ordering number : ENA1286SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorMCH6121DC / DC Converter AmplifierApplications Relay drivers, lamp drivers, motor drivers, line switch.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall-sized pa
Datasheet: 2SA1803O
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