2SA2151 PDF and Equivalents Search

 ..1. Size:221K  inchange semiconductor

 2sa2151.pdf

isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC6011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

 0.1. Size:206K  sanken-ele

 2sa2151a.pdf

2-1 Transistors Specifications List by Part Number Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) min max (V) (V) (A) 2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SA1216 ... See More ⇒

 0.2. Size:221K  inchange semiconductor

 2sa2151a.pdf

isc Silicon PNP Power Transistor 2SA2151A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC6011A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒

 8.1. Size:151K  toshiba

 2sa2154ct.pdf

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current VCEO = -50V, IC = -100mA (max) Unit mm 0.6 0.05 Excellent hFE linearity 0.5 0.03 hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SC6026CT Absolute M... See More ⇒

 8.2. Size:151K  toshiba

 2sa2154mfv.pdf

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current 0.80 0.05 VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 400 Complementary to 2SC6026MFV 3... See More ⇒

 8.3. Size:258K  toshiba

 2sa2154ct-y 2sa2154ct-gr.pdf

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current V = -50V, I = -100mA (max) CEO C Unit mm Excellent h linearity FE h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE FE Complementary to 2SC6026CT Absolute Maximum Ratings... See More ⇒

 8.4. Size:145K  toshiba

 2sa2154.pdf

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 120 400 1 Complementary to 2SC6026 3 2 0.8 0.05 0.1 0.05 1.0 0.05 Ab... See More ⇒

 8.5. Size:254K  sanyo

 2sa2153.pdf

Ordering number ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor 2SA2153 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Con... See More ⇒

 8.6. Size:201K  onsemi

 2sa2153.pdf

Ordering number EN8123A 2SA2153 Bipolar Transistor http //onsemi.com -50V, -2A, Low VCE(sat), PNP Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT process Low saturation voltage Large current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions R... See More ⇒