2SC4886 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4886
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3PF
2SC4886 Transistor Equivalent Substitute - Cross-Reference Search
2SC4886 Datasheet (PDF)
2sc4886.pdf
LAPT 2SC4886Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC4886 Symbol Conditions 2SC4886 UnitUnit 0.20.2 5.515.60.23.45VCBO 150 ICBO VCB=150V 100max AVVCEO 150 IEBO VEB=5V 100max AV
2sc4886.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4886DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1860100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc4884.pdf
Ordering number:EN4136NPN Epitaxial Planar Silicon Transistor2SC4884High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High definition CRT display.unit:mm Especially suited for use in color TV chrome output2084Band high breakdown voltage driver applications.[2SC4884]4.51.9 2.610.51.2 1.4Features Adoption of MBIT process
2sc4885.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4885NPN SILICON EPITAXIAL TRANSISTOR3 PINS SUPER MINI MOLDPACKAGE DIMENSIONS(Units: mm)FEATURES Excellent Low NF in Low Frequency Band 2.10.1 Low Voltage Use1.250.1 Low Cob : 0.9 pF TYP. Low Noise Voltage : 90 mV TYP.2 Super Mini Mold Package. EIAJ : SC-7031ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)Colle
2sc4880.pdf
2SC4880Silicon NPN Triple DiffusedApplicationTV/character display horizontal deflection outputFeatures High speed switchingtf 0.5 s High breakdown voltageVCBO = 1700 VOutlineTO-3PL1. Base 2. Collector 3. Emitter1232SC4880Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1700 VCollector to emitter vo
2sc4883.pdf
2SC4883/4883ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)Application : Audio Output Driver and TV Velocity-modulation(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsExternal Dimensions FM20(TO220F)Symbol 2SC4883 2SC4883AUnitSymbol Conditions 2SC4883 2SC4883A Unit0.24.20.210.1c0.52.8VCBO 150 180V 10max AI
2sc4883 2sc4883a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4883 2SC4883A DESCRIPTION With TO-220F package Complement to type 2SA1859/1859A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25
2sc4881.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4881DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Switching SpeedLow Collector Saturation Voltage-: V = 0.4V(Max)@ (I = 2.5A, I = 125mA)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo
2sc4880.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4880DESCRIPTIONHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sc4883a.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SA1859A100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)
2sc4883.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1859100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
