All Transistors. 2SC4713K Datasheet

 

2SC4713K Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4713K

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 800 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SMT3_SC-59

2SC4713K Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4713K Datasheet (PDF)

1.1. 2sc4774 2sc4713k.pdf Size:156K _rohm

2SC4713K
2SC4713K

High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K ?Features ?Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC4774 2) Low capacitance. 2.0 0.9 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit (2) (1) Collector-base voltage VCBO 12 V 0.65 0.65 0.15 Collector-emitter voltage VCEO 6 V 1.3 Emitter-bas

4.1. 2sc4710.pdf Size:101K _sanyo

2SC4713K
2SC4713K

Ordering number:EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit:mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation package. 3.2

4.2. 2sc4710ls.pdf Size:29K _sanyo

2SC4713K
2SC4713K

Ordering number : ENN3688B 2SC4710LS NPN Triple Diffused Planar Silicon Transistor 2SC4710LS 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=2100V). unit : mm Small Cob(typical Cob=1.3pF). 2079D Wide ASO. [2SC4710LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8 Full isola

 4.3. 2sc4715 e.pdf Size:37K _panasonic

2SC4713K
2SC4713K

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

4.4. 2sc4715.pdf Size:34K _panasonic

2SC4713K
2SC4713K

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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