2SCR523EB Datasheet and Replacement
Type Designator: 2SCR523EB
SMD Transistor Code: NB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 350
MHz
Collector Capacitance (Cc): 1.6
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
SC-89
EMT3F
SOT416FL
- BJT Cross-Reference Search
2SCR523EB Datasheet (PDF)
..1. Size:2014K rohm
2scr523m 2scr523eb 2scr523ub.pdf 
2SCR523M / 2SCR523EB / 2SCR523UBDatasheetNPN 100mA 50V General Purpose TransistorlOutlinelParameter Value SOT-723 SOT-416FLVCEO50VIC100mA 2SCR523M 2SCR523EB(VMT3) (EMT3F) SOT-323FL 2SCR523UB(UMT3F) lFeatures lInner circui
..2. Size:167K rohm
2scr523eb.pdf
General purpose transistor(50V,0.1A) 2SCR523M / 2SCR523EB / 2SCR523UB Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT3Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Abbreviated symbol : NBApplications Switch, LED driver EMT3F(3)Packaging specifications Package VMT3 EMT3F UMT3F(1) (2)Packaging Type Taping Tapi
8.1. Size:166K rohm
2scr522eb.pdf
General purpose transistor(20V,0.2A) 2SCR522M / 2SCR522EB / 2SCR522UB Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT3Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Abbreviated symbol : NCApplications Switch, LED driver EMT3F(3)Packaging specifications Package VMT3 EMT3F UMT3F(1) (2)Packaging Type Taping Tapin
9.1. Size:1546K rohm
2scr554pfra.pdf
2SCR554P FRADatasheetMiddle Power Transistor (80V / 1.5A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC
9.2. Size:1815K rohm
2scr554p5.pdf
2SCR554P5DatasheetMiddle Power Transistors (80V / 1.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging speci
9.3. Size:491K rohm
2scr542d.pdf
Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv
9.4. Size:1313K rohm
2scr552pfra.pdf
2SCR552P2SCR552PFRADatasheetNPN 3.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase Collector IC3.0AEmitter 2SCR552PFRA2SCR552P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR552P2SAR552PFRA3) Low VCE(sat)VCE(sat)=0.40V(Max.)(IC/IB=1A/50mA)4) Lead Free/RoHS Co
9.5. Size:791K rohm
2scr574da07.pdf
2SCR574D A07DatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D A07 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead
9.6. Size:238K rohm
2scr544p.pdf
Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NSDriver Packaging specifications Inner circuit (Unit : mm)Package Taping
9.7. Size:1584K rohm
2scr513p5.pdf
2SCR513P5DatasheetMedium Power Transistors (50V / 1V)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC1AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=-0.35V(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi
9.8. Size:435K rohm
2scr554r.pdf
Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyTSMT3VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)2) High speed switching(3)(1) (2) Structure(1) Base(2) EmitterNPN Silicon epitaxial planar transistor(3) Collector Abbreviated symbol : NH Applications Inner circuitDriver(3) Pa
9.9. Size:1890K rohm
2scr514p.pdf
2SCR514PDatasheetMiddle Power Transistors (80V / 700mA)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC0.7AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=300mV (Max.) (IC/IB=300mA/15mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
9.10. Size:789K rohm
2scr574d.pdf
2SCR574DDatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro
9.11. Size:1514K rohm
2scr562f3.pdf
2SCR562F3DatasheetNPN 6.0A 30V Middle Power TransistorlOutlinel DFN2020-3SParameter ValueVCEO30VIC6AHUML2020L3lFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=220mV(Max.).(IC/IB=3A/150mA)3) High collector current.IC=6A(max),ICP=7A(max)4) Leadless small SMD package (HUML2020L3)Excellent thermal and electrical conduct
9.12. Size:484K rohm
2scr513p.pdf
2SCR513PDatasheetNPN 1.0A 50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto
9.13. Size:1789K rohm
2scr512r.pdf
2SCR512RDatasheetNPN 2.0A 30V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO30VIC2ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR512R3)Low VCE(sat)VCE(sat)=400mV(Max.)(IC/IB=700mA/35mA)lApplicationlLOW FREQ
9.14. Size:493K rohm
2scr543d.pdf
Midium Power Transistors (50V / 4A) 2SCR543D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDri
9.15. Size:1910K rohm
2scr533p.pdf
2SCR533PDatasheetMiddle Power Transistors (50V / 3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
9.16. Size:1764K rohm
2scr513r.pdf
2SCR513RDatasheetNPN 1.0A 50V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO50VIC1ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR513R3)Low VCE(sat)VCE(sat)=350mV (Max.)(IC/IB=500mA/25mA)lApplicationlLOW FRE
9.17. Size:375K rohm
2scr553r.pdf
2SCR553RDatasheetNPN 2.0A 50V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO50VBase IC2.0AEmitter 2SCR553R lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR553R3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=700mA/35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMotor driver
9.18. Size:1814K rohm
2scr512p5.pdf
2SCR512P5DatasheetMidium Power Transistors (30V / 2V)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=0.4V(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifica
9.19. Size:410K rohm
2scr502ub.pdf
2SCR502EB / 2SCR502UBDatasheetNPN 500mA 30V General Purpose TransistorslOutline EMT3F UMT3FParameter ValueCollector Collector VCEO30VBase Base IC500mAEmitter Emitter 2SCR502UB 2SCR502EB (SC-85) (SC-89) lFeatures1)General Purpose.2) Complementary PNP Types :2SAR502EB (EMT3F) / 2SAR502UB (UMT3F) 3) Large collector current :Ic=max.500mA4) Low VcE
9.20. Size:1019K rohm
2scr572d3fra.pdf
2SCR572D3 FRADatasheetNPN 5.0A 30V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3 FRA.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLI
9.21. Size:486K rohm
2scr533d.pdf
Midium Power Transistors (50V / 3A) 2SCR533D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv
9.22. Size:1671K rohm
2scr586d3.pdf
2SCR586D3NPN 5.0A 80V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO80VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR586D3.3) Low VCE(sat)VCE(sat)=300mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificati
9.23. Size:1581K rohm
2scr553p.pdf
2SCR553PDatasheetMiddle Power Transistors (50V / 2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifica
9.24. Size:1310K rohm
2scr514pfra.pdf
2SCR514P2SCR514PFRADatasheetNPN 0.7A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBase IC Collector 0.7AEmitter 2SCR514PFRA2SCR514P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR514P2SAR514PFRA3) Low VCE(sat)VCE(sat)=0.30V(Max.)(IC/IB=300mA/15mA)4) Lead Free/RoHS
9.25. Size:410K rohm
2scr502eb 2scr502eb 2scr502ub.pdf
2SCR502EB / 2SCR502UBDatasheetNPN 500mA 30V General Purpose TransistorslOutline EMT3F UMT3FParameter ValueCollector Collector VCEO30VBase Base IC500mAEmitter Emitter 2SCR502UB 2SCR502EB (SC-85) (SC-89) lFeatures1)General Purpose.2) Complementary PNP Types :2SAR502EB (EMT3F) / 2SAR502UB (UMT3F) 3) Large collector current :Ic=max.500mA4) Low VcE
9.26. Size:1554K rohm
2scr544r.pdf
2SCR544RDatasheetNPN 2.5A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC2.5ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR544R3)Low VCE(sat)VCE(sat)=300mV(Max.)(IC/IB=1A/50mA)lApplicationlLOW FREQU
9.27. Size:792K rohm
2scr573d.pdf
2SCR573DDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro
9.28. Size:1808K rohm
2scr544p5.pdf
2SCR544P5DatasheetMidium Power Transistors (80V / 2.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC2.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/ IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi
9.29. Size:1805K rohm
2scr533p5.pdf
2SCR533P5DatasheetMiddle Power Transistors (50V / 3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specificati
9.30. Size:1308K rohm
2scr513pfra.pdf
2SCR513P2SCR513PFRADatasheetNPN 1.0A 50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513PFRA2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P2SAR513PFRA3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS
9.31. Size:1418K rohm
2scr502u3hzg.pdf
2SCR502U3 HZGDatasheetNPN 500mA 30V General purpose transistorsAEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO30VIC0.5AUMT3lFeatures lInner circuitl l1)General purpose.2)Complementary PNP types :2SAR502U3 HZG (UMT3)3)Collector current is large.4)Low VCE(sat).lApplicationlLOW FREQUENCY AMPLIF
9.32. Size:1540K rohm
2scr553pfra.pdf
2SCR553P FRADatasheetMiddle Power Transistor (50V / 2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHIN
9.33. Size:1014K rohm
2scr574d3fra.pdf
2SCR574D3 FRADatasheetNPN 2.0A 80V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO80VIC2ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR574D3 FRA.3) Low VCE(sat)VCE(sat)=300mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIF
9.34. Size:1743K rohm
2scr514r.pdf
2SCR514RDatasheetNPN 0.7A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC0.7ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR514R1)Low saturation voltage, typicallyVCE(sat)=300mV(Max.)(IC/ IB=300mA/15mA)l
9.35. Size:1681K rohm
2scr573d3.pdf
2SCR573D3DatasheetNPN 3.0A 50V Power TransistorlOutlinel Parameter Value DPAK VCEO50VIC3ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR573D3.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificatio
9.36. Size:1513K rohm
2scr542pfra.pdf
2SCR542PFRA2SCR542P Data SheetNPN 5.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBaseIC Collector5.0AEmitter2SCR542PFRA2SCR542PlFeatures(SC-62)1) Suitable for Middle Power Driver2SAR542PFRA2) Complementary PNP Types : 2SAR542P3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=2A/100mA)4) Lead Free/RoHS Compliant
9.37. Size:787K rohm
2scr572d.pdf
2SCR572DDatasheetNPN 5.0A 30V Middle Power TransistorlOutlinelParameter Value CPTVCEO30VIC5A 2SCR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR572D.3) Low VCE(sat)VCE(sat)=0.40V(Max.).(IC/IB=2A/100mA)4) Lead Free/R
9.38. Size:1479K rohm
2scr542f3.pdf
2SCR542F3DatasheetNPN 3.0A 30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO30VIC3A2SCR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=0.20V(Max.).(IC/IB=1A/50mA)3) High collector current.IC=3A(max),ICP=6A(m
9.39. Size:237K rohm
2scr512p.pdf
Midium Power Transistors (30V / 2A) 2SCR512P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NBDriver Packaging specifications Inner circuit (Unit : mm)Package Taping
9.40. Size:418K rohm
2scr544d.pdf
Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT36.55.12.30.5 Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)0.752) High speed switching0.650.92.32.3(1) (2) (3)0.51.0 ApplicationsDriver Packaging specifications Inner
9.41. Size:1992K rohm
2scr502eb 2scr502ub.pdf
2SCR502EB / 2SCR502UBDatasheetNPN 500mA 30V General purpose transistorslOutlinelParameter Value EMT3F UMT3FVCEO30VIC0.5A 2SCR502EB 2SCR502UBSOT-416FL SOT-323FL lFeaturesl1)General purpose. lInner circuitl2)Complementary PNP types :2SAR502EB(EMT3F)/2SAR
9.42. Size:1314K rohm
2scr512pfra.pdf
2SCR512P2SCR512PFRADatasheetNPN 2.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase IC2.0A Collector Emitter 2SCR512PFRA2SCR512P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR512P2SAR512PFRA3) Low VCE(sat)VCE(sat)=0.40V(Max.)(IC/IB=700mA/35mA)4) Lead Free/RoHS
9.43. Size:1825K rohm
2scr542p.pdf
2SCR542PDatasheetMiddle Power Transistor (30V / 5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=400mV(Max.)(IC/IB=2A/100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specification
9.44. Size:1654K rohm
2scr572d3.pdf
2SCR572D3NPN 5.0A 30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificati
9.45. Size:1513K rohm
2scr544pfra.pdf
2SCR544P2SCR544PFRAData SheetNPN 2.5A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBaseCollectorIC2.5AEmitter2SCR544PFRA2SCR544PlFeatures(SC-62)1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR544P 2SAR544PFRA3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=1A/50mA)4) Lead Free/RoHS Compliant
9.46. Size:1815K rohm
2scr543r.pdf
2SCR543RDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO50VIC3ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Transistor2) Complementary PNP Types:2SAR543R3) Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=2A/100mA)lApplicationlLOW FREQUEN
9.47. Size:1548K rohm
2scr533pfra.pdf
2SCR533P FRADatasheetMiddle Power Transistor (50V / 3A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
9.48. Size:236K rohm
2scr552p.pdf
Midium Power Transistors (30V / 3A) 2SCR552P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NFDriver Packaging specifications Inner circuit (Unit : mm)Package Taping(
9.49. Size:796K rohm
2scr573da08.pdf
2SCR573D A08DatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D A08 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead
9.50. Size:239K rohm
2scr554p.pdf
Midium Power Transistors (80V / 1.5A) 2SCR554P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NHDriver Packaging specifications Inner circuit (Unit : mm)(2)Package
9.51. Size:264K inchange semiconductor
2scr542d.pdf
isc Silicon NPN Power Transistors 2SCR542DDESCRIPTIONDC Current Gain h :200-500@ I = 0.5AFE CCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
9.52. Size:213K inchange semiconductor
2scr586d.pdf
isc Silicon NPN Power Transistor 2SCR586DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V 0.3V@(I =2A,I =100mA)CE(sat) C BComplementary NPN types:2SAR586D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
9.53. Size:213K inchange semiconductor
2scr574d.pdf
isc Silicon NPN Power Transistor 2SCR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.3V(max)@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
9.54. Size:213K inchange semiconductor
2scr573d.pdf
isc Silicon NPN Power Transistor 2SCR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.35V@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
9.55. Size:212K inchange semiconductor
2scr572d.pdf
isc Silicon NPN Power Transistor 2SCR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.4V@(I =2A,I =0.1A)CE(sat) C BComplementary NPN types:2SAR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, 2SD1047
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
History: 2SC1262
| BC167
| 2SA1483
| ECG2360
| BDX85B
| DTA124EEB
| SGSF321
Keywords - 2SCR523EB transistor datasheet
2SCR523EB cross reference
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