2SCR523UB Datasheet and Replacement

   Type Designator: 2SCR523UB
   SMD Transistor Code: NB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SC85 UMT3F SOT323FL

2SCR523UB Substitution

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2SCR523UB Datasheet (PDF)

..1. Size:2014K rohm
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2SCR523M / 2SCR523EB / 2SCR523UBDatasheetNPN 100mA 50V General Purpose TransistorlOutlinelParameter Value SOT-723 SOT-416FLVCEO50VIC100mA 2SCR523M 2SCR523EB(VMT3) (EMT3F) SOT-323FL 2SCR523UB(UMT3F) lFeatures lInner circui

7.1. Size:167K rohm
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General purpose transistor(50V,0.1A) 2SCR523M / 2SCR523EB / 2SCR523UB Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT3Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Abbreviated symbol : NBApplications Switch, LED driver EMT3F(3)Packaging specifications Package VMT3 EMT3F UMT3F(1) (2)Packaging Type Taping Tapi

8.1. Size:166K rohm
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General purpose transistor(20V,0.2A) 2SCR522M / 2SCR522EB / 2SCR522UB Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT3Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Abbreviated symbol : NCApplications Switch, LED driver EMT3F(3)Packaging specifications Package VMT3 EMT3F UMT3F(1) (2)Packaging Type Taping Tapin

9.1. Size:1546K rohm
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2SCR554P FRADatasheetMiddle Power Transistor (80V / 1.5A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

9.2. Size:1815K rohm
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2SCR554P5DatasheetMiddle Power Transistors (80V / 1.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging speci

9.3. Size:491K rohm
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Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv

9.4. Size:1313K rohm
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2SCR552P2SCR552PFRADatasheetNPN 3.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase Collector IC3.0AEmitter 2SCR552PFRA2SCR552P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR552P2SAR552PFRA3) Low VCE(sat)VCE(sat)=0.40V(Max.)(IC/IB=1A/50mA)4) Lead Free/RoHS Co

9.5. Size:791K rohm
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2SCR574D A07DatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D A07 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead

9.6. Size:238K rohm
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Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NSDriver Packaging specifications Inner circuit (Unit : mm)Package Taping

9.7. Size:1584K rohm
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2SCR513P5DatasheetMedium Power Transistors (50V / 1V)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC1AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=-0.35V(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi

9.8. Size:435K rohm
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Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyTSMT3VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)2) High speed switching(3)(1) (2) Structure(1) Base(2) EmitterNPN Silicon epitaxial planar transistor(3) Collector Abbreviated symbol : NH Applications Inner circuitDriver(3) Pa

9.9. Size:1890K rohm
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2SCR514PDatasheetMiddle Power Transistors (80V / 700mA)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC0.7AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=300mV (Max.) (IC/IB=300mA/15mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

9.10. Size:789K rohm
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2SCR574DDatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro

9.11. Size:1514K rohm
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2SCR562F3DatasheetNPN 6.0A 30V Middle Power TransistorlOutlinel DFN2020-3SParameter ValueVCEO30VIC6AHUML2020L3lFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=220mV(Max.).(IC/IB=3A/150mA)3) High collector current.IC=6A(max),ICP=7A(max)4) Leadless small SMD package (HUML2020L3)Excellent thermal and electrical conduct

9.12. Size:484K rohm
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2SCR513PDatasheetNPN 1.0A 50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto

9.13. Size:1789K rohm
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2SCR512RDatasheetNPN 2.0A 30V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO30VIC2ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR512R3)Low VCE(sat)VCE(sat)=400mV(Max.)(IC/IB=700mA/35mA)lApplicationlLOW FREQ

9.14. Size:493K rohm
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Midium Power Transistors (50V / 4A) 2SCR543D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDri

9.15. Size:1910K rohm
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2SCR533PDatasheetMiddle Power Transistors (50V / 3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

9.16. Size:1764K rohm
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2SCR513RDatasheetNPN 1.0A 50V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO50VIC1ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR513R3)Low VCE(sat)VCE(sat)=350mV (Max.)(IC/IB=500mA/25mA)lApplicationlLOW FRE

9.17. Size:375K rohm
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2SCR553RDatasheetNPN 2.0A 50V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO50VBase IC2.0AEmitter 2SCR553R lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR553R3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=700mA/35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMotor driver

9.18. Size:1814K rohm
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2SCR512P5DatasheetMidium Power Transistors (30V / 2V)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=0.4V(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifica

9.19. Size:410K rohm
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2SCR502EB / 2SCR502UBDatasheetNPN 500mA 30V General Purpose TransistorslOutline EMT3F UMT3FParameter ValueCollector Collector VCEO30VBase Base IC500mAEmitter Emitter 2SCR502UB 2SCR502EB (SC-85) (SC-89) lFeatures1)General Purpose.2) Complementary PNP Types :2SAR502EB (EMT3F) / 2SAR502UB (UMT3F) 3) Large collector current :Ic=max.500mA4) Low VcE

9.20. Size:1019K rohm
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2SCR572D3 FRADatasheetNPN 5.0A 30V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3 FRA.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLI

9.21. Size:486K rohm
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Midium Power Transistors (50V / 3A) 2SCR533D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv

9.22. Size:1671K rohm
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2SCR586D3NPN 5.0A 80V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO80VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR586D3.3) Low VCE(sat)VCE(sat)=300mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificati

9.23. Size:1581K rohm
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2SCR553PDatasheetMiddle Power Transistors (50V / 2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifica

9.24. Size:1310K rohm
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2SCR514P2SCR514PFRADatasheetNPN 0.7A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBase IC Collector 0.7AEmitter 2SCR514PFRA2SCR514P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR514P2SAR514PFRA3) Low VCE(sat)VCE(sat)=0.30V(Max.)(IC/IB=300mA/15mA)4) Lead Free/RoHS

9.25. Size:410K rohm
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9.26. Size:1554K rohm
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2SCR544RDatasheetNPN 2.5A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC2.5ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR544R3)Low VCE(sat)VCE(sat)=300mV(Max.)(IC/IB=1A/50mA)lApplicationlLOW FREQU

9.27. Size:792K rohm
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2SCR573DDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro

9.28. Size:1808K rohm
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2SCR544P5DatasheetMidium Power Transistors (80V / 2.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC2.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/ IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi

9.29. Size:1805K rohm
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2SCR533P5DatasheetMiddle Power Transistors (50V / 3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specificati

9.30. Size:1308K rohm
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2SCR513P2SCR513PFRADatasheetNPN 1.0A 50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513PFRA2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P2SAR513PFRA3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS

9.31. Size:1418K rohm
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2SCR502U3 HZGDatasheetNPN 500mA 30V General purpose transistorsAEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO30VIC0.5AUMT3lFeatures lInner circuitl l1)General purpose.2)Complementary PNP types :2SAR502U3 HZG (UMT3)3)Collector current is large.4)Low VCE(sat).lApplicationlLOW FREQUENCY AMPLIF

9.32. Size:1540K rohm
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2SCR553P FRADatasheetMiddle Power Transistor (50V / 2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHIN

9.33. Size:1014K rohm
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2SCR574D3 FRADatasheetNPN 2.0A 80V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO80VIC2ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR574D3 FRA.3) Low VCE(sat)VCE(sat)=300mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIF

9.34. Size:1743K rohm
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2SCR514RDatasheetNPN 0.7A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC0.7ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR514R1)Low saturation voltage, typicallyVCE(sat)=300mV(Max.)(IC/ IB=300mA/15mA)l

9.35. Size:1681K rohm
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2SCR573D3DatasheetNPN 3.0A 50V Power TransistorlOutlinel Parameter Value DPAK VCEO50VIC3ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR573D3.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificatio

9.36. Size:1513K rohm
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2SCR542PFRA2SCR542P Data SheetNPN 5.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBaseIC Collector5.0AEmitter2SCR542PFRA2SCR542PlFeatures(SC-62)1) Suitable for Middle Power Driver2SAR542PFRA2) Complementary PNP Types : 2SAR542P3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=2A/100mA)4) Lead Free/RoHS Compliant

9.37. Size:787K rohm
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2SCR572DDatasheetNPN 5.0A 30V Middle Power TransistorlOutlinelParameter Value CPTVCEO30VIC5A 2SCR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR572D.3) Low VCE(sat)VCE(sat)=0.40V(Max.).(IC/IB=2A/100mA)4) Lead Free/R

9.38. Size:1479K rohm
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2SCR542F3DatasheetNPN 3.0A 30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO30VIC3A2SCR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=0.20V(Max.).(IC/IB=1A/50mA)3) High collector current.IC=3A(max),ICP=6A(m

9.39. Size:237K rohm
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Midium Power Transistors (30V / 2A) 2SCR512P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NBDriver Packaging specifications Inner circuit (Unit : mm)Package Taping

9.40. Size:418K rohm
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Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT36.55.12.30.5 Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)0.752) High speed switching0.650.92.32.3(1) (2) (3)0.51.0 ApplicationsDriver Packaging specifications Inner

9.41. Size:1992K rohm
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2SCR502EB / 2SCR502UBDatasheetNPN 500mA 30V General purpose transistorslOutlinelParameter Value EMT3F UMT3FVCEO30VIC0.5A 2SCR502EB 2SCR502UBSOT-416FL SOT-323FL lFeaturesl1)General purpose. lInner circuitl2)Complementary PNP types :2SAR502EB(EMT3F)/2SAR

9.42. Size:1314K rohm
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2SCR512P2SCR512PFRADatasheetNPN 2.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase IC2.0A Collector Emitter 2SCR512PFRA2SCR512P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR512P2SAR512PFRA3) Low VCE(sat)VCE(sat)=0.40V(Max.)(IC/IB=700mA/35mA)4) Lead Free/RoHS

9.43. Size:1825K rohm
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2SCR542PDatasheetMiddle Power Transistor (30V / 5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=400mV(Max.)(IC/IB=2A/100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specification

9.44. Size:1654K rohm
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2SCR572D3NPN 5.0A 30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificati

9.45. Size:1513K rohm
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2SCR544P2SCR544PFRAData SheetNPN 2.5A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBaseCollectorIC2.5AEmitter2SCR544PFRA2SCR544PlFeatures(SC-62)1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR544P 2SAR544PFRA3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=1A/50mA)4) Lead Free/RoHS Compliant

9.46. Size:1815K rohm
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2SCR543RDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO50VIC3ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Transistor2) Complementary PNP Types:2SAR543R3) Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=2A/100mA)lApplicationlLOW FREQUEN

9.47. Size:1548K rohm
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2SCR533P FRADatasheetMiddle Power Transistor (50V / 3A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

9.48. Size:236K rohm
2scr552p.pdf pdf_icon

Midium Power Transistors (30V / 3A) 2SCR552P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NFDriver Packaging specifications Inner circuit (Unit : mm)Package Taping(

9.49. Size:796K rohm
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2SCR573D A08DatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D A08 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead

9.50. Size:239K rohm
2scr554p.pdf pdf_icon

Midium Power Transistors (80V / 1.5A) 2SCR554P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NHDriver Packaging specifications Inner circuit (Unit : mm)(2)Package

9.51. Size:264K inchange semiconductor
2scr542d.pdf pdf_icon

isc Silicon NPN Power Transistors 2SCR542DDESCRIPTIONDC Current Gain h :200-500@ I = 0.5AFE CCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

9.52. Size:213K inchange semiconductor
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isc Silicon NPN Power Transistor 2SCR586DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V 0.3V@(I =2A,I =100mA)CE(sat) C BComplementary NPN types:2SAR586D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

9.53. Size:213K inchange semiconductor
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isc Silicon NPN Power Transistor 2SCR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.3V(max)@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

9.54. Size:213K inchange semiconductor
2scr573d.pdf pdf_icon

isc Silicon NPN Power Transistor 2SCR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.35V@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

9.55. Size:212K inchange semiconductor
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isc Silicon NPN Power Transistor 2SCR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.4V@(I =2A,I =0.1A)CE(sat) C BComplementary NPN types:2SAR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .