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2SD2444K Specs and Replacement

Type Designator: 2SD2444K

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SMT3

 2SD2444K Substitution

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2SD2444K datasheet

 ..1. Size:67K  rohm

2sd2444k.pdf pdf_icon

2SD2444K

2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) SMT3 at IC / IB = 0.4A / 20mA. 2) IC = 1A 2.9 1.1 0.4 0.8 3) Complements the 2SB1590K. (3) (2) (1) Packaging specification and hFE 0.95 0.95 0.15 1.9 Type 2SD2444K (1)Emitter SMT3 Package (2)Base Each lead has same ... See More ⇒

 7.1. Size:45K  rohm

2sd2444.pdf pdf_icon

2SD2444K

2SB1590K Transistors Transistors 2SD2444K (96-150-B218) (96-247-D218) 293 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o... See More ⇒

 8.1. Size:188K  toshiba

2sd2440.pdf pdf_icon

2SD2444K

2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit mm High breakdown voltage VCBO = 100 V V = 18 V EBO Low saturation voltage V = 1.2 V (max) (I = 5 A, I = 1 A) CE (sat) C B High speed t = 1 s (typ.) (I = 5 A, I = 0.5 A) f C B High DC current gain h = 200 (min) (V = 5 V, I = 0.5 A) FE CE C Maximum Ra... See More ⇒

 8.2. Size:180K  toshiba

2sd2449.pdf pdf_icon

2SD2444K

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2449 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 160 V (min) Complementary to 2SB1594 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V ... See More ⇒

Detailed specifications: 2SD1782K, 2SD2114K, 2SD2142K, 2SD2143, 2SD2153, 2SD2226K, 2SD2351, 2SD2391, A1941, 2SD2537, 2SD2652, 2SD2653K, 2SD2653, 2SD2654, 2SD2656, 2SD2657K, 2SD2657

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