2SD2661 Datasheet and Replacement

2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) 180mV 4.0(IC / IB = 1A / 50mA) 1.0 2.5 0.5(1)(2)(3)(1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89 (3)Emitter Abbreviated symbol : FW Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Li

Ordering number : ENN73802SB1700 / 2SD2663PNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1700 / 2SD2663Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit : mmvoltage regulator control. 2042B[2SB1700 / 2SD2663]8.0Features4.03.31.0 1.0 High DC current gain. Large current capacity and wide

2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89(3)EmitterAbbreviated symbol : FZ Packaging specifications Absolute maximum ratings (Ta=25

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit: mmHigh-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage

2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit: mmMotor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-em

2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2695 Micro Motor Drive, Hammer Drive Applications Unit: mmSwitching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Zener diode included between collector

2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit: mm High Speed Switching Applications. High voltage: VCBO = 1700 V Low saturation voltage: V = 5 V (max) CE (sat) High speed: t = 0.8 s (max) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector

Ordering number : ENN75272SD2689LSNPN Triple Diffused Planar Silicon Transistor2SD2689LSColor TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process).[2SD2689LS] Adoption of MBIT process.10.0 4.53.22.80.91.2 1.20.75 0.71 : Base

Ordering number : ENN6679A2SD2649NPN Triple Diffused Planar Silicon Transistor2SD2649Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2649] Adoption of MBIT process. 5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Ordering number : ENN64782SD2627NPN Triple Diffused Planar Silicon Transistor2SD2627Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20

Ordering number : ENN69222SD2646NPN Triple Diffused Planar Silicon Transistor2SD2646Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2646] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Ordering number : ENN75262SD2688LSNPN Triple Diffused Planar Silicon Transistor2SD2688LSColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2079D High reliability(Adoption of HVP process).[2SD2688LS] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.9

Ordering number : ENN69602SB1683 / 2SD26392SB1683 : PNP Epitaxial Planar Silicon Transistor2SD2639 : NPN Triple Diffused Planar Silicon Transistor2SB1683 / 2SD2639140V / 12A, AF 60W Output ApplicationsFeaturesPackage Dimensions Wide ASO because of on-chip ballast resistance.unit : mm Good dependence of fT on current and good HF2010Ccharacteristic.[2SB1683 / 2SD26

Ordering number : ENN6897A2SD2645NPN Triple Diffused Planar Silicon Transistor2SD2645Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2645] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number : ENN6500A2SD2624NPN Triple Diffused Planar Silicon Transistor2SD2624Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2624] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number:ENN6352NPN Triple Diffused Planar Silicon Transistor2SD2629Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2079C High reliability (Adoption of HVP process).[2SD2629] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20.70.75

Ordering number : ENN6474B2SD2634NPN Triple Diffused Planar Silicon Transistor2SD2634Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2634] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0

Ordering number : ENN6478A2SD2627LSNPN Triple Diffused Planar Silicon Transistor2SD2627LSColor TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.91.

Ordering number:ENN6449NPN Epitaxial Planar Silicon Darlington Transistor2SD2635120V / 2A Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit:mm2064AFeatures [2SD2635]2.5 Darlington connection1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature.0.60.9 0.51 2 30.451 :

Ordering number : ENN6781A2SD2650NPN Triple Diffused Planar Silicon Transistor2SD2650Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2650] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Ba

Ordering number : ENN71682SD2658LSNPN Triple Diffused Planar Silicon Transistor2SD2658LSColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1500V).2079D High reliability (Adoption of HVP process).[2SD2658LS] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0

Ordering number : ENN69232SD2648NPN Triple Diffused Planar Silicon Transistor2SD2648Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2648] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Preliminary Datasheet 2SD2655 R07DS0281EJ0300(Previous: REJ03G0810-0200)Silicon NPN Epitaxial Planer Rev.3.00Low Frequency Power Amplifier Mar 28, 2011Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW

2SD2653 Transistors Low frequency amplifier 2SD2653 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7( )3 Features 1) A collector current is large. 2) VCE(sat) 180mV ( ) ( )1 20.95 0.95at IC = 1A / IB = 50mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Absolute m

2SD2652TransistorsGeneral purpose amplification (12V, 1.5A)2SD2652 External dimensions (Units : mm) ApplicationLow frequency amplifier Features1.251) A collector current is large.2.12) Collector saturation voltage is low.VCE(sat) 200mV0.1Min.At IC = 500mA / IB = 25mAEach lead has same dimensionsROHM : UMT3 (1) EmitterAbbreviated symbol : EWEIAJ : SC-70 (2

2SD26562SD2656FRADatasheet NPN 1A 30V Low Frequency Amplifier TransistorsAEC-Q101 QualifiedlOutlineUMT3Parameter ValueCollectorVCEO30VBaseIC1AEmitter2SD2656FRA2SD2656SOT-323 (SC-70)lFeatures1) A Collecotr current is large.General Purpose.2) Collector saturation voltage is low.VCE(sat) is Max. 350mVAt IC=500mA, IB=25mA3) Complementary PNP Types :2S

2SD2653KTransistorsLow frequency amplifier2SD2653K External dimensions (Units : mm) ApplicationLow frequency amplifierDriver1.6 Features2.81) A collector current is large.2) VCE(sat) 180mV0.3Min.At IC = 1A / IB = 50mAEach lead has same dimensionsAbbreviated symbol : FW (1) EmitterROHM : SMT3EIAJ : SC-59 (2) BaseJEDEC : SOT-346 (3) Collector Absolute m

2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S Dimensions (Unit : mm) Application Low frequency amplifier Storobo Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA (1)Emitter(GND)(2)Collector(OUT)(3)Base(IN) Taping specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base

2SD2656 Transistors General purpose amplification (30V, 1A) 2SD2656 Application Low frequency amplifier 1.25 Features 2.11) A collector current is large. 2) Collector saturation voltage is low. 0.1Min.VCE(sat) 350mV Each lead has same dimensionsAt IC = 500mA / IB = 25mA ROHM : UMT3 (1) EmitterAbbreviated symbol : EUEIAJ : SC-70 (2) Base JEDEC : SOT-323 (

2SD2614TransistorsMedium Power Transistor(Motor, Relay drive)(6010V, 5A)2SD2614 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to10.0 4.5 "L" loads.3.2 2.8 3) Built-in resistor between base and emitter.4) Built-in damper diode.1.21.30.80.75 ( )2.54 2.54 2.6 (1)

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units : mm) Application Low frequency amplifier Driver 1.6 Features 2.81) A collector current is large. 2) VCE(sat) 350mV 0.3Min.At IC = 1A / IB = 50mA Each lead has same dimensionsROHM : SMT3 Abbreviated symbol : FZ (1) EmitterEIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector

2SD2696DatasheetLow frequency transistor (for amplification)lOutlinelParameter Value VMT3VCEO30VIC400mASOT-723SC-105AA lFeaturesl1)The transistor of 400mA class which went onlylInner circuitlwith 2012 size conventionally is attained in1208 size.2)Collector saturation voltage is low

2SD2607TransistorsPower Transistor (100V, 8A)2SD2607 External dimensions (Units: mm) Features1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53.2 2.8 3) Built-in damper diode.4) Complements the 2SB1668.1.21.30.80.752.54 2.54 2.6 Absolute maximum ratings (Ta = 25C) (1) (2) (3)( )(1) (2) (3) (1) B

2SD2657KFRA AEC-Q101 Qualified 2SD2657KFRA

2SD2611TransistorsPower Transistor (80V, 7A)2SD2611 Features1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A.2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 100 VCollecto

2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7( )3 Features 1) A collector current is large. ( ) ( )1 22) VCE(sat) : max.250mV 0.95 0.950.16 At lc=1.5A / lB=30mA 1.9(1) Base(2) EmitterEach lead has same dimensions (3) Collector Abso

2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7( )3 Features 1) A collector current is large. 2) VCE(sat) : max. 370mV (1) (2)0.95 0.95 At lc=1.5A / lB=75mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Absolute maxi

2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XXNPN epitaxial planar silicon transistor

2SD2618TransistorsPower Transistor (80V, 4A)2SD2618 Features Circuit diagram1) Darlington connection for a high hFE.C2) Built-in resistor between base and emitter.3) Built-in damper doide.4) Complements the 2SB1676.BR 300RB : BaseC : CollectorEE : Emitter Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VC

2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit : mm) Application Low frequency amplifier TSMT31.0MAX2.90.85 Features 0.70.4(3)1) A collector current is large. 2) Collector saturation voltage is low. 1 2VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 500mA / IB = 25mA 1.9(1) Base(2) EmitterEach lead

2SD2657 Transistors Low frequency amplifier 2SD2657 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7(3) Features 1) A collector current is large. 1 22) VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 1A / IB = 50mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector Packaging

2SD2654DatasheetGeneral purpose Transistor (50V, 150mA)lOutlinel SOT-416 Parameter Value SC-75A VCEO50VIC150mAEMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLOW FREQUENCY AMPLIFIER, DRIVER

2SD2615TransistorsPower Transistor (120V, 6A)2SD2615 Features Circuit diagram1) Darlington connection for high DC current gain.C2) Built-in resistor between base and emitter.3) Built-in damper diode.4) Complements the 2SB1674. BR1 R2ER1 5.0k B : BaseC : CollectorR2 300E : Emitter Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector

2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( )1 20.95 0.95At IC = 2A / IB = 40mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Pac

2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7(3) Features 1) A collector current is large. (3A) ( ) ( )2) VCE(sat) : max. 250mV 1 20.95 0.950.16At IC = 1.5A / IB = 30mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector P

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units : mm) Application Low frequency amplifier Driver 1.6 Features 2.81) A collector current is large. 2) VCE(sat) 350mV 0.3Min.At IC = 1A / IB = 50mA Each lead has same dimensionsROHM : SMT3 Abbreviated symbol : FZ (1) EmitterEIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector

2SD2674DatasheetGeneral purpose amplification (12V, 1.5A)lOutlinel SOT-346T Parameter Value SC-96 VCEO12VIC1.5ATSMT3lFeatures lInner circuitl l1)A collector current is large.2)Collector saturation voltage is low. VCE(sat)200mV at IC=500mA/IB=25mAlApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificat

2SD2616TransisitorsPower Transistor (100V, 5A)2SD2616 Features1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A.2) Excellent hFE current characteristics.3) Pc=30W. (Tc=25C) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 100 VCollector-emitter voltage VCEO 100 VEmitter-base voltage VEBO 5 V5 A(DC)C

2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XZNPN epitaxial planar silicon transistor

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

Transistors2SD2620JSilicon NPN epitaxial planer typeUnit: mmFor low-frequency amplification1.60+0.050.030.12+0.030.011.000.053 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)1 2 High emitter to base voltage VBEO 0.270.02(0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2

Transistors2SD2623Silicon NPN epitaxial planar typeFor low-frequency amplificationUnit: mm0.15+0.100.3+0.10.050.0 Features3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.1 2(0.65) (0.65) Absolute Maximum Ratings Ta = 25C1.30.1Parameter Symbol Rating Unit2

Power Transistors2SD2659Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power switching 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE TO-220D built-in: Excellent package with withstand voltage 5 kVguaranteed1.40.22.60.11.60.20.80.1 0.550.1

Transistors2SD2621Silicon NPN epitaxial planar typeFor low-frequency driver amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.023 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta

2SD2651Silicon NPN EpitaxialHigh Voltage AmplifierADE-208-976 (Z)1st. EditionOctober 2000Features High breakdown voltageVCEO = -300V minOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2651Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltag

2SD2655Silicon NPN Epitaxial PlanerLow Frequency Power AmplifierADE-208-1388A (Z)Rev.1Jun. 2001Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Comple

Power Transistor 2SD2633Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold)(Ta=25C) (Ta=25C)Symbol Ratings Unit Symbol Test Conditions Ratings Unit4.2I AV 200 V CBO V =200V 100maxCBO CB10.03.32.8C0.5V 150 V I V =6V 10max mACEO EBO EBI =50mAV 6 V V C 150min VEBO CEOI 8 A h V =2V, I =6A 2000minC FE CE CI 1 A V I =6

CEquivalent circuitBDarlington 2SD2643(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO

CEquivalent circuitBDarlington 2SD2642(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c0.5VCBO 110 ICB

Equivalent circuitCBDarlington 2SD2641(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)RatingsSymbol Ratings Symbol Conditions UnitUnit0.24.80.415.6100max AVCB

Transistors2SD261

2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2603(BR3DD2603F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, low VCE(sat). / Applications Power out amplifier applications. / Equivalent Circuit

2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

isc Silicon NPN Darlington Power Transistor 2SD2633DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V =1.5V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general pur

isc Silicon NPN Darlington Power Transistor 2SD2642DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1687Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2645DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2634DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SD2689DESCRIPTIONHigh speed.High breakdown voltage(VCBO=1500V).High reliability(Adoption of HVP process).Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV Horizontal DeflectionOutput Applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co