2N5840 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5840
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 375 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
2N5840 Transistor Equivalent Substitute - Cross-Reference Search
2N5840 Datasheet (PDF)
2n5838 2n5839 2n5840.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute max
2n5838 2n5839 2n5840.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collecto
Datasheet: 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 , 2N5839 , 2N583A , 2N584 , 2SD1047 , 2N5841 , 2N5842 , 2N5843 , 2N5844 , 2N5845 , 2N5845A , 2N5846 , 2N5847 .
