2N5840 Specs and Replacement
Type Designator: 2N5840
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 375 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
2N5840 Substitution
- BJT ⓘ Cross-Reference Search
2N5840 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute max... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collecto... See More ⇒
Detailed specifications: 2N5834, 2N5835, 2N5836, 2N5837, 2N5838, 2N5839, 2N583A, 2N584, TIP3055, 2N5841, 2N5842, 2N5843, 2N5844, 2N5845, 2N5845A, 2N5846, 2N5847
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