2SD2702 Specs and Replacement
Type Designator: 2SD2702
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Package: TUMT3
2SD2702 Substitution
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2SD2702 datasheet
2SD2702 Transistors General purpose amplification (12V, 1.5A) 2SD2702 Dimensions (Unit mm) Application Low frequency amplifier Features 1) A collector current is large. 2) Collector saturation voltage is low. ... See More ⇒
2SD2707 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-723 Parameter Value SC-105AA VCEO 50V IC 150mA VMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l LOW FREQENCY AMPLIFIER, DRIVER ... See More ⇒
For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 SOT-346 2.9 1.1 2) High emitter-base voltage. VEBO = 25V (Min.) 0.4 0.8 3) Low Ron (3) Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor ( ) ( ) 2 1 0.95 0.95 (1) Emitter 0.15 (2) Base 1.9 (3) Collector Each lea... See More ⇒
Detailed specifications: 2SD2671, 2SD2672, 2SD2673, 2SD2674, 2SD2675, 2SD2696, 2SD2700, 2SD2701, BD135, 2SD2703, 2SD2704K, 2SD2707, QST2, QST3, QST4, QST5, QST6
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