2SD2707 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2707
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: EMT3
2SD2707 Transistor Equivalent Substitute - Cross-Reference Search
2SD2707 Datasheet (PDF)
2sd2707.pdf
2SD2707DatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-723 Parameter Value SC-105AA VCEO50VIC150mAVMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLOW FREQENCY AMPLIFIER, DRIVER
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base
2sd2702.pdf
2SD2702 Transistors General purpose amplification (12V, 1.5A) 2SD2702 Dimensions (Unit : mm) Application Low frequency amplifier Features 1) A collector current is large. 2) Collector saturation voltage is low.
2sd2703.pdf
2SD2703DatasheetGeneral purpose amplification (30V, 1A)lOutlinel SOT-323T Parameter Value VCEO30VIC1ATUMT3lFeatures lInner circuitl l1)A collector current is large.2)Collector-Emitter saturation voltage is low. VCE(sat)350mV at IC=500mA/IB=25mAlApplicationlLOW FREQUENCY AMPLIFIER
2sd2704k.pdf
For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 SOT-3462.9 1.12) High emitter-base voltage. VEBO = 25V (Min.) 0.4 0.83) Low Ron (3) Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor ( ) ( )2 10.95 0.95 (1) Emitter0.15(2) Base1.9 (3) Collector Each lea
2sd2704k 2sd2705k.pdf
For Muting (20V, 0.3A) 2SD2704K / 2SD2705S Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 2.9 1.12) High emitter-base voltage. 0.4 0.8 VEBO = 25V (Min.) (3)3) Low Ron Ron= 0.7 (Typ.) (2) (1)Structure 0.95 0.95 (1) Emitter0.15Epitaxial planar type (2) Base1.9 (3) CollectorNPN silicon transistor Each lead ha
2sd2701.pdf
2SD2701 Transistors Low frequency amplifier 2SD2701 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA ROHM : TUMT3 Abbreviated symbol : FZ (1) Base(2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limit
2sd2700.pdf
2SD2700 Transistors Low frequency amplifier 2SD2700 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM : TUMT3 Abbreviated symbol : FW (1) Base(2) Emitter (3) Collector Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
