QSX6 Specs and Replacement
Type Designator: QSX6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Package: TSMT6
QSX6 Substitution
- BJT ⓘ Cross-Reference Search
QSX6 datasheet
QSX6 Transistors Low frequency amplifier QSX6 External dimensions (Unit mm) Application Low frequency amplifier Driver 2.8 1.6 Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA Each lead has same dimensions Abbreviated symbol X06 Equivalent circuit Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit (6) (5) ... See More ⇒
Detailed specifications: QST5, QST6, QST7, QSX1, QSX2, QSX3, QSX4, QSX5, 2SB817, US6T4, US6T5, US6T6, US6T7, US6X3, US6X4, US6X5, US6X6
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